Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si_(1-x)Ge_x crystals

O.V. Smirnova; V.V. Kalaev; Yu.N. Makarov; N.V. Abrosimov; H. Riemann

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Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si_(1-x)Ge_x crystals

机译：Si_（1-x）Ge_x晶体的直拉生长过程中坩埚旋转对结晶速率行为的数值研究

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Crucible rotation effect on crystallization rate behavior during CZ Si_(1-x)Ge_x growth has been numerically studied for several crystal positions of the growth, including the initial and final stages. It has been shown that the melt flow structures strongly differ at various crucible rotation rates and at decreasing the melt depth, which results in quite specific behavior of crystallization characteristics. The computations explained physical reasons of experimentally observed unstable crystal growth at the stage of upper cone formation.

机译：已经对CZ Si_（1-x）Ge_x生长期间坩埚旋转对结晶速率行为的影响进行了数值研究，涉及生长的几个晶体位置，包括初始和最终阶段。已经显示出，熔体流动结构在各种坩埚旋转速率和减小的熔体深度下有很大的不同，这导致非常特殊的结晶特性。该计算解释了在上锥体形成阶段实验观察到的不稳定晶体生长的物理原因。

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来源
《Journal of Crystal Growth》 |2006年第2期|p.281-286|共6页
作者
O.V. Smirnova; V.V. Kalaev; Yu.N. Makarov; N.V. Abrosimov; H. Riemann;
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作者单位

Soft-Impact Ltd., 27 Engels av., P.O. Box 83, 194156 St. Petersburg, Russian Federation;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Computer simulation; A1. Turbulent convection; A2. Czochralski method; B1. Si_(1-x)Ge_x;

机译：A1。计算机仿真;A1。湍流对流;A2。直拉法;B1。 Si_（1-x）Ge_x;

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专利

1. Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of Ge_xSi_{1-x} single crystals [J] . SERKAN ABBASO?LU Turkish Journal of Electrical Engineering and Computer Sciences . 2012,第Supa2期

机译：Ge_xSi_ {1-x}单晶的直拉晶体生长过程中晶体和坩埚旋转的三维数值模拟
2. Simulation of heat transfer and melt flow in Czochralski growth of Si_(1-x)Ge_x crystals [J] . O.V. Smirnova, V.V. Kalaev, Yu.N. Makarov, Journal of Crystal Growth . 2004,第1a3期

机译：Si_（1-x）Ge_x晶体Czochralski生长中传热和熔体流动的模拟
3. Si_(1-x)Ge_x (x≥0.2) crystal growth in the absence of a crucible [J] . Amalia Christina Wagner, Arne Croell, Michael A. Gonik, Journal of Crystal Growth . 2014,第sepa1期

机译：在没有坩埚的情况下Si_（1-x）Ge_x（x≥0.2）晶体的生长
4. Spectroscopic investigations of crystallinity and electronic-structural transitions due to solid phase crystallization of amorphous Si_(1-x)Ge_x [C] . S.Yamaguchi, N.Sugii, K.Nakagawa, Symposium on Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices - 1999, held April 5-9, 1999, San Francisco, California, U.S.A. . 1999

机译：非晶Si_（1-x）Ge_x固相结晶引起的结晶度和电子结构转变的光谱研究
5. Numerical simulations of Czochralski growth of single crystals. [D] . Xiao, Qiang. 1994

机译：Czochralski单晶生长的数值模拟。
6. Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation [O] . Minh-Tan Ha, Le Van Lich, Yun-Ji Shin, 2020

机译：外部静磁场下通过顶晶溶液生长提高SiC晶体生长速率和均匀性的数值研究
7. Phonon Scatterings in the Lattice Thermal Conductivity of Si_(1-x) Ge_x Alloy Nanowires: Theoretical Study [O] . Soran Mohammed Mamand 2014

机译：Si_（1-x）Ge_x合金纳米线的晶格导热系数散射散射：理论研究
8. Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector [R] . Lin, T., Park, J. S., Gunapala, S. D., 1993

机译：si_（1-x）Ge_x / si异质结内部光电发射红外探测器的光响应模型

Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si_(1-x)Ge_x crystals

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