Vapor pressure scanning implications of CdTe crystal growth

Jacob H. Greenberg

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Vapor pressure scanning implications of CdTe crystal growth

机译：蒸气压扫描对CdTe晶体生长的影响

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Vapor pressrue scanning (VPS) is a direct high precision method of investigation of the composition of non-stoichiometric crystls at high temperatures. It is based on xperimental measurements of the vapor pressure, from which three-dimensional P-T-X (pressure-temperature-composition) range of existence of the crystalline phase is constructed. For CdTe the accuracy of the VPS determiantion of nonstoichiometry was proved to be within 10~(-4) at /100 for temperatures up to the melting point (1365 K).

机译：蒸气压扫描（VPS）是研究高温下非化学计量晶状液成分的直接高精度方法。它基于蒸气压的实验测量，由此构造了结晶相存在的三维P-T-X（压力-温度-组成）范围。对于CdTe，在高达熔点（1365 K）的温度下，非化学计量的VPS测定的准确度在/ 100时在10〜（-4）以内。

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来源
《Journal of Crystal Growth》 |1999年第3期|p.406-412|共7页
作者
Jacob H. Greenberg;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
CdTe; Crystal growth; Nonstoichiometry; Vapor pressure scanning;

机译：碲化镉;晶体生长;非化学计量;蒸气压扫描;

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2. Defects in CdTe Single Crystals Grown by Very Fast Vapor Growth Technique [J] . H. WIEDEMEIER, G.H. WU Journal of Electronic Materials . 1995,第8期

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Vapor pressure scanning implications of CdTe crystal growth

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