Investigations on the effect ofcontacts on p-type CdTe DLTS-measurements

K. Scholz; H. Stiens; G. Muller-Vogt

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Investigations on the effect ofcontacts on p-type CdTe DLTS-measurements

机译：接触对p型CdTe DLTS测量影响的研究

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DLTS-Measurements are an important tool in investigating the defect structure within a Schottky barrier. In polar compound semiconductors like CdTe it cannot be ruled out that the original defect structure of the semiconductor material is changed by the contact foramtion process. We report for the first time on influences of processes both of the surface pretreatment and of the deposition of contact metals on the results of deep level transient spectroscopy. We report as well on the influence of the ohmic contact on the measured level parameters. We are able to divide the determined defect levels in surface relevant and bulk relevant types.

机译：DLTS测量是研究肖特基势垒内缺陷结构的重要工具。在像CdTe这样的极性化合物半导体中，不能排除通过接触孔形成工艺改变了半导体材料的原始缺陷结构。我们首次报告了表面预处理和接触金属沉积过程对深能级瞬态光谱学结果的影响。我们还报告了欧姆接触对所测量的液位参数的影响。我们能够将确定的缺陷级别划分为表面相关类型和本体相关类型。

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来源
《Journal of Crystal Growth》 |1999年第3期|p.586-592|共7页
作者
K. Scholz; H. Stiens; G. Muller-Vogt;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
DLTS-measurements; p-Type CdTe;

机译：DLTS-测量;p型碲化镉;

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1. Investigation of ohmic contact to P-type CdTe:P using ac and dc techniques [J] . A.Alnajjar, S. Abdul Jawad, N. Yusuf Renewable energy . 2002,第3期

机译：使用交流和直流技术研究与P型CdTe：P的欧姆接触
2. Fabrication of CdS/CdTe Heterostructures by Chemical Synthesis Using a p-Type CdTe Film Grown by Electrodeposition Employing EDTA as Strong Complexing Agent [J] . Arreguin-Campos M., Gutierrez K. Z-B, Quinones-Galvan J. G., Journal of Electronic Materials . 2019,第6期

机译：通过使用EDTA作为强络合剂的电沉积物生长的P型CdTe膜，通过化学合成制备Cds / CdTe异质结构。
3. Sodium citrate complexing agent-dependent growth of n- and p-type CdTe thin films for applications in CdTe/CdS based photovoltaic devices [J] . Wang Jun, Liu Shurong, Mu Yannan, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2018,第期

机译：柠檬酸钠络合剂依赖性生长N-和P型CDTE薄膜，用于在CDTE / CDS的光伏器件中应用
4. Investigations on the effect of contacts on p-type CdTe DLTS-measurements [C] . K.Scholz, H.Stiens, G.Mueller-Vogt, Symposium C on growth, characterisation and applications of bulk II-VIs of the E-MRS 1998 spring conference . 1999

机译：对P型CDTE DLTS测量接触影响的研究
5. Effect of ascorbic acid on CdTe quantum dots and investigation of different chemical sensors on CdTeHg quantum dots. [D] . Chitrala, Yamini. 2012

机译：抗坏血酸对CdTe量子点的影响以及对CdTeHg量子点的不同化学传感器的研究。
6. Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties [O] . Ligang Ma, Wenchao Liu, Hongling Cai, -1

机译：在p型CdTe薄膜上无催化剂和无模板的n型CdS纳米线的低温原位生长和p-n异质结性能
7. Formation of Ohmic Contact in P-Type CdTe Using Cu2Te Electrode and Its Effect on the Photovoltaic Properties of CdTe Solar Cells [O] . 2002

机译：使用Cu2Te电极在p型CdTe中形成欧姆接触及其对CDTE太阳能电池光伏性能的影响
8. Characterization of p-Type CdTe Electrodes in Acetonitrile/Electrolyte Solutions. Nearly Ideal Behavior from Reductive Surface Pretreatments. [R] . White, H. S., Ricco, A. J., Wrighton, M. S. 1983

机译：在乙腈/电解质溶液中表征p型CdTe电极。从还原表面预处理几乎理想的行为。

Investigations on the effect ofcontacts on p-type CdTe DLTS-measurements

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