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首页> 外文期刊>Journal of Crystal Growth >Investigation of properties of porous silicon embedded with ZnSe and CdSe
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Investigation of properties of porous silicon embedded with ZnSe and CdSe

机译：ZnSe和CdSe包埋的多孔硅的性能研究

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Three-dimensional arrays of a few ananometer size clusters have been realized using a porous silicon (PS) matrix by filling its pores with CdSe. From the photoluminescence behavior it is conclude that the average size of the CdSe, ZnSe clusters is about 3-5 nm. We compare the PL and Raman scattering spectra of the pure PS area of samples with those obtained from the embedded areas on the same wafer. The results are consistent with the stabilization of the PL peak in the case of CeSe in spite of the different PL peak positions of the pure PS. PL spectra of the PS were examined as function of laser irradiation time and laser intensities.
机译：通过使用CdSe填充多孔硅（PS）基质，已经实现了几个ananometer尺寸簇的三维阵列。从光致发光行为可以得出结论，CdSe，ZnSe团簇的平均大小约为3-5 nm。我们将样品的纯PS区域的PL和拉曼散射光谱与从同一晶片上的嵌入区域获得的光谱进行比较。尽管纯PS的PL峰位置不同，但结果与CeSe情况下PL峰的稳定一致。检查了PS的PL光谱与激光照射时间和激光强度的关系。

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