There are many attempts for stable growth of II-VI compound semiconductor bulk single crystals because of their interesting applications in many fields. However, it is difficult to obtain high quality II-VI substrates. Therefroe, these materials have been grown epitaxially on the substrates of different materials. In this epitaxial growth, defects are generated at the interface between substrates and epitaxial films. It is known that these defects deteriorate the quality and shorten the lifetime of devices fabricated on these epitaxial films.
展开▼
