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首页> 外文期刊>Journal of Crystal Growth >Effect of hydrogen inAlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy
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Effect of hydrogen inAlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy

机译：原子氢辅助分子束外延生长AlGaAs中氢的影响

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摘要

We have found that the photoluminescence (PL) peak position of Al_0.25Ga_0.75As notably changes with atomic hydrogenj (H) supply in molecular beam epitaxy. The PL peak position for the sample grown with atomic H at 580 deg C is shifted toward lower energy compared to that of the `without H' by as much as ￣80 meV. From secondary ion mass spectroscopy (SIMS) measurements, it is also found that the observed shifts of PL peak position for the `with H' is due to changes in the Al contents, and is attributed to re-evaporation of Al in the form of Al hydrides during the growth with atomic H. The dependence of Al contents on growth temperature is also investigated by PL and reflection high-energy electron diffraction (RHEED) oscillations. The effect of atomic H on Al contents in AlGaAs are most pronounced at the growth temperature of 580 deg C.
机译：我们发现，在分子束外延中，Al_0.25Ga_0.75As的光致发光（PL）峰位置随原子氢（H）的供给而显着变化。与“无H”原子相比，原子H在580摄氏度下生长的样品的PL峰值位置向更低的能量方向移动了约80meV。从二次离子质谱（SIMS）测量中，还发现，“带有H”的PL峰位置的观察到的偏移是由于Al含量的变化所致，并且归因于Al的重新蒸发形式为在氢原子生长过程中氢化铝。还通过PL和反射高能电子衍射（RHEED）振荡研究了Al含量对生长温度的依赖性。原子H对AlGaAs中Al含量的影响在580摄氏度的生长温度下最为明显。

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