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首页> 外文期刊>Journal of Crystal Growth >Modelling of solution growth of silicon from small indium droplets - homogeneos nucleation
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Modelling of solution growth of silicon from small indium droplets - homogeneos nucleation

机译：小铟滴中硅溶液生长的建模-同质成核

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摘要

The nucleation frequencly and the size of the critical nucleus of silicon in an indium solution have been described on the basis of the classicla theory. Due to a lack of reliable data for the free interface energy of crystalline silicon and liquid indim a simple approximation using the Young's equation and the Eotovs's rule has been applied. The results of the calculation have been compared with experimental data of melt solidification both of the chemically similar Ge and of a substance witha low melting point. In spite of the reamining uncertainties, the homogeneous nucleation of semiconductors in metallic solutions requries considerable undercooling. The high values of the interface energy are mainly responsible for this behaviour. From the calculated deendence of the size of the critical nucleus on the undercooling one can expect that micro-crystallites are stabkle in a slightly undercooled solution.
机译：基于经典理论，描述了铟溶液中硅的成核频率和硅临界核的尺寸。由于缺乏有关晶体硅和液体的自由界面能的可靠数据，因此已应用了使用Young方程和Eotovs规则的简单近似法。计算结果已与化学相似的锗和低熔点物质的熔融凝固实验数据进行了比较。尽管存在不确定性，但半导体在金属溶液中的均匀成核仍需要相当大的过冷度。界面能量的高值主要负责此行为。从计算得出的过冷临界核尺寸的依存度可以看出，微晶在稍微过冷的溶液中会产生斑点。

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