...
首页> 外文期刊>Journal of Crystal Growth >Low-temperature synthesis of C_60 thin films byionized cluster beam depositon technique
【24h】

Low-temperature synthesis of C_60 thin films byionized cluster beam depositon technique

机译:电离簇束沉积技术低温合成C_60薄膜

获取原文
获取原文并翻译 | 示例
           

摘要

C_60 filsm on Si(1 1 1) have been grown at low substrte temeprature of 100 deg C byionized clsuter beam depostion techqiue. Fourier transform infrared (FTIR) transmssion spectroscopy, Raman measurements and X-ray diffraciton are employed to investigate the strcutre of depositked films. The results show that the acceleration voltage playes an important role in the grwoth of the films. As the acceleration voltage is moderate (~100 V), a prisine C_60 film with face-centrered-cubic (fcc) crystal strcuture can be grown. Furthe increase of the acceleration voltage leads to the formation of amorophous crbon (a-C) in the grown films. When the acceleration voltage is increased to 600 V, the deposited film has a complkete amoprhous carbon (a-C) structure.
机译:Si(1 1 1)上的C_60膜已在100℃下通过离子化离子束钝化技术在较低的温度下生长。傅里叶变换红外(FTIR)透射光谱,拉曼测量和X射线衍射被用来研究沉积膜的弹纹。结果表明,加速电压在薄膜的生长中起着重要的作用。当加速电压适中(约100 V)时,可以生长出具有面心立方(fcc)晶体结构的C_60膜。进一步地,加速电压的增加导致在生长的膜中形成非晶体cr(a-C)。当加速电压增加到600 V时,沉积膜具有完整的非碳(a-C)结构。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号