MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

C.Z. Wu; Y. Tsou; C.M. Tsai

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MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

机译：无需实时监控的垂直腔面发射激光器结构的MBE生长

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Evaluation of producing a vertical-cavity surface-emitting laser (VCSEL) epitaxial structure by molecualr beam epitaxy (MBE) without resorting to any real-time monitoring technqiue is reported. Continuous grading of Al_xGa_1-xAs between x=0.12 to x=0.92 was simply achieved by changing the Al and Ga cell temepratures in no more than three steps per DBR period. Highly uniform DBR and VCSEL structures were demosnrated with a multi-wafer MBE system. Run-to-run standard deviation of reflectance spectrum center wavelength was 0.5/100 and 1.4/100 for VCSEL etalon wavelength.

机译：报道了通过分子束外延（MBE）生产垂直腔表面发射激光器（VCSEL）外延结构的评估，而无需借助任何实时监测技术。简单地通过在每个DBR周期内以不超过三步的方式更改Al和Ga电池的特性，就可以在x = 0.12到x = 0.92之间对Al_xGa_1-xAs进行连续分级。高度均匀的DBR和VCSEL结构已通过多晶片MBE系统进行了去除。 VCSEL标准具波长的反射光谱中心波长的逐项标准偏差为0.5 / 100和1.4 / 100。

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来源
《Journal of Crystal Growth》 |1999年第5期|p.1005-1009|共5页
作者
C.Z. Wu; Y. Tsou; C.M. Tsai;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Molecular beam epitaxy; Distributed Bragg reflector; Vertical-cavity surface-emitting lasers;

机译：分子束外延;分布式布拉格反射器;垂直腔面发射激光器;

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专利

1. LOW TEMPERATURE MBE GROWN GaAs APPLIED IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J] . K. REGINSKI, A. MALAG, D. RADOMSKA, Electron Technology . 1996,第4期

机译：垂直腔表面激光中的低温MBE生长GaAs
2. High efficiency selectively oxidised MBE grown vertical-cavity surface-emitting lasers [J] . Weigl B., Grabherr M. Electronics Letters . 1996,第6期

机译：高效选择性氧化MBE生长的垂直腔面发射激光器
3. Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor [J] . Mitsuhiro Mizutani, Fumiharu Teramae, Kazutaka Takeuchi, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：使用分子束外延原位反射监测器精确控制垂直腔表面发射激光器的结构生长
4. Growth characterization of InxGa1-xAs/AlxGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure [C] . Mitani S. M., Alias M. S., Manaf A. A., IEEE International Conference on Semiconductor Electronics . 2008

机译： X / INF> GA 1-X / INF> GA 1-X / INM>作为多氧化物层垂直腔表面发射激光器结构
5. Design, simulation and fabrication of nanostructured IR vertical-cavity surface-emitting lasers with graded Bragg interfaces. [D] . Zhang, Chichang. 2003

机译：具有渐变布拉格界面的纳米结构红外垂直腔面发射激光器的设计，仿真和制造。
6. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’ [O] . Yang Mei, Guo-En Weng, Bao-Ping Zhang, 2017

机译：覆盖绿色间隙的量子点垂直腔表面发射激光器
7. Analysis of spatial emission structures in vertical-cavity surface-emitting lasers with feedback from a volume Bragg grating [O] . Noblet, Y., Ackemann, T. 2012

机译：来自体积布拉格光栅反馈的垂直腔面发射激光器中的空间发射结构分析

MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

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