Epitaxial growht of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy

H.P.D. Schenk; G.D. Kipshidze; V.B. Lebedev

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Epitaxial growht of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy

机译：等离子体辅助分子束外延在Si（1 1 1）上外延生长AlN和GaN

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摘要

Epitaxila wurtzite aluminum nitride (AlN) and gallium nitride (GaN) films have been grown on Si(1 1 1) by plasma-assisted molecular beam epitaxy (PA-MBE). Two-eimensional growth (2DG) of single-crystalline AlN films is achieved on Si(1 1 1) near stoichiometric supply of aluminum and atomic nitrogen. Two distinct categories of AlN-surface reconstructions have been observed. GaN films exhibit 1×1 high-energy electron diffraction (RHEED) pattern if grown between 650 deg C and 770 deg C substrate temperature on AlN buffers. Stable Ga- and N-adlayer-induced surface reconstructions have been studied below 600 deg C after the growth. Thue X-ray7 diffraction (XRD) pattern show sharp and well separated (0 0 0 l) reflections oif wurtzite GaN and AlNJ indicating complete texture with GaN[0 0 0 1]‖AlN[0 0 0 1]‖Si[1 1 1]. Fromk the determined GaN lattice constant complete strain relaxation can be concluded which is further confirmed bythe temeprture-dependent photoluminescence (PL) investigations.

机译：通过等离子辅助分子束外延（PA-MBE）在Si（1 1 1）上生长了外延纤锌矿纤锌矿型氮化铝（AlN）和氮化镓（GaN）膜。在接近化学计量供应的铝和原子氮的Si（1 1 1）上实现了单晶AlN薄膜的二维生长（2DG）。已经观察到两类不同的AlN表面重建。如果在AlN缓冲液上在650摄氏度和770摄氏度之间的衬底温度下生长，GaN膜将显示1×1高能电子衍射（RHEED）模式。生长后，在低于600摄氏度的条件下研究了稳定的Ga和N层诱导的表面重建。 X射线7衍射（XRD）图案显示锐利且分离良好的（0 0 0 l）反射，纤锌矿GaN和AlNJ表示GaN [0 0 0 1]” AlN [0 0 0 1]” Si [1 1 1]。从中可以得出确定的GaN晶格常数完全应变松弛，这可以通过依赖于Temeprture的光致发光（PL）研究得到进一步证实。

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来源
《Journal of Crystal Growth》 |1999年第5期|p.359-364|共6页
作者
H.P.D. Schenk; G.D. Kipshidze; V.B. Lebedev;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
AlNJ; GaN; Nitrides; RHEED; Adlayer; Surface reconstruction;

机译：AlNJ;氮化镓;氮化物;RHEED;Adlayer;表面重建;

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1. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates [J] . Ahmadi Elaheh, Wu Feng, Li Haoran, Semiconductor science and technology . 2015,第5期

机译：N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构，通过等离子体辅助分子束外延在邻近衬底上生长
2. Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy [J] . Sandra Diez, Subhajit Mohanty, Cagliyan Kurdak, Applied Physics Letters . 2020,第4期

机译：通过等离子体辅助分子束外延在轴上生长的缩放通道N极GaN / AlN异质结构上的高电子迁移率和低薄层电阻
3. Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy [J] . Shen X.Q., Takahashi T., Rong X., Applied Physics Letters . 2013,第23期

机译：超薄AlN / GaN超晶格中间层在等离子体辅助分子束外延生长在Si（110）和Si（111）衬底上生长的GaN膜的应变工程中的作用
4. Suppression of Stark effect in ultra-thin stress-free GaN/AlN multiple quantum well structures grown by plasma-assisted molecular beam epitaxy [C] . O A Koshelev, D V Nechaev, P N Brunkov, International School and Conference "Saint Petersburg OPEN" . 2020

机译：抑制通过等离子体辅助分子束外延生长的超薄无应力GaN / ALN多量子阱结构中的颗粒作用
5. Structure, morphology, and kinetics of GaN film growth using gas-source and RF plasma-assisted metal-organic molecular beam epitaxy [D] . Woll, Arthur Randall 2000

机译：使用气体源和RF等离子体辅助金属 - 有机分子束外延对GaN薄膜生长的结构，形态和动力学
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Deep Ultra-Violet Emission from GaN/AlN matrix grown by Plasma-Assisted Molecular Beam Epitaxy [O] . J. Verma, V. Protasenko, A. Verma, 2013

机译：由甘油/ ALN矩阵的深度紫外线排放等离子体辅助分子束外延

Epitaxial growht of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy

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