Molecular beam epitaxy grwoth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting dioes using in situ reflectance monitoring

P. Uusimaa; P. Sipila; M. Saarinen

首页> 外文期刊>Journal of Crystal Growth >Molecular beam epitaxy grwoth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting dioes using in situ reflectance monitoring

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Molecular beam epitaxy grwoth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting dioes using in situ reflectance monitoring

机译：MgZnSSe / ZnSSe / CdZnSe微腔发光二极管分子束外延生长的原位反射监测

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摘要

Results on molecular beam epitaxy growth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting diodes are reproeted. Satisfactory cotnrol of the cavity resoance and distributed Bragg reflector step band position is obtained using in situ refelctance measurement for the laeyr thickness monitoring. Microcavity light-emitting dioes show spectral emission width of 14-17 nm at 505-506 nm. A maximum wall-plug efficiency of 0.33/100 is measrued from a device with a 40-μm window diameter.

机译：MgZnSSe / ZnSSe / CdZnSe微腔发光二极管分子束外延生长的结果。使用原位反射率测量进行层厚监测，可获得空腔分辨率和分布的布拉格反射器阶跃带位置的令人满意的控制。微腔发光二极管在505-506 nm处显示14-17 nm的光谱发射宽度。窗口直径为40μm的设备测得的最大墙塞效率为0.33 / 100。

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来源
《Journal of Crystal Growth》 |1999年第5期|p.1032-1035|共4页
作者
P. Uusimaa; P. Sipila; M. Saarinen;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Molecular beam epitaxy; II-VI semiconductors; Distributed Bragg reflector;

机译：分子束外延;II-VI半导体;分布式布拉格反射器;

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专利

1. Solid source molecular beam epitaxy grwoth and characterization of resonant cavity light-emitting diodes [J] . Seppo Orsila, Jukka Kongas, Mika Toivonen Journal of Crystal Growth . 1999,第MAY期

机译：固体源分子束外延生长和谐振腔发光二极管的表征
2. Efficient blue-green light-emitting diodes of ZnSSe: Te/ZnMgSSe DH structure grown by molecular-beam epitaxy [J] . Hong Chan Lee, Tomoki Abe, Masashi Watanabe, Journal of Crystal Growth . 2000,第期

机译：ZnSSe的高效蓝绿色发光二极管：分子束外延生长的Te / ZnMgSSe DH结构
3. Efficient blue-green light-emitting diodes of ZnSSe Te/ZnMgSSe DH structure grown by molecular-beam epitaxy [J] . Hong Chan Lee, Tomoki Abe, Masashi Watanabe Journal of Crystal Growth . 2000,第期

机译：分子束外延生长的ZnSSe Te / ZnMgSSe DH结构的高效蓝绿色发光二极管
4. New blue-ultraviolet PIN photodiodes of II-VI widegap compounds ZnSSe using p-type GaAs substrates grown by molecular beam epitaxy [C] . T. Abe, H. Maeta, J. Naruse, International Conference on II-VI Compounds . 2004

机译：II-VI宽覆盖的新蓝色紫外线销光电二极管使用分子束外延生长的P型GaAs基材的ZnSSE
5. In situ pyrometric interferometry monitoring and control growth and carbon doping of gallium arsenide and aluminum gallium arsenide in solid source molecular beam epitaxy. [D] . Sato, Darryl Lynn. 1996

机译：原位高温干涉法监测和控制固体源分子束外延中砷化镓和砷化铝镓的生长和碳掺杂。
6. Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays [O] . Ha Quoc Thang Bui, Ravi Teja Velpula, Barsha Jain, 2019

机译：分子束外延生长的全色InGaN / AlGaN纳米线微型发光二极管：下一代微型显示器的有希望的候选人
7. Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry [O] . P. Uusimaa, K. Rakennus, A. Salokatve, 1995

机译：None
8. In-situ spectral reflectance for improving molecular beam epitaxy device growth [R] . Breiland, W. G. , Hammons, B. E. , Hou, H. Q. , 1997

机译：用于改善分子束外延器件生长的原位光谱反射率

Molecular beam epitaxy grwoth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting dioes using in situ reflectance monitoring

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