The use of 1,2,3,4,5 pentamethylcyclopentadiene as an in situ growth modifer chemical for the chemical vapour deposition of iron from iron pentacarbonyl

P.A. Lane; P.J. Wright

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The use of 1,2,3,4,5 pentamethylcyclopentadiene as an in situ growth modifer chemical for the chemical vapour deposition of iron from iron pentacarbonyl

机译：1,2,3,4,5五甲基环戊二烯作为原位生长改性剂化学品从五羰基铁化学气相沉积铁的用途

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Using the technique of metal organic chemical vapour deposition (MOCVD), the growth rate of iron from iron pentacarbonyl is significantly modifed by the addition of 1,2,3,4,5 pentamethylcyclopentadiene as a growth modifier chemical to the growth environment. In the lower growth temperature range below 250 deg C, the iron growth rate is reduced by the addition of 1,2,3,4,5 pentamethylcyclopentadiene, and above 250 deg C, the iron growth rate is increased by up to an order to magnitude. The use of a grwoth modifer therefore extends the useful temperature range for iron deposition from iron pentacarbonyl to higher temperatures.

机译：使用金属有机化学气相沉积（MOCVD）技术，通过向生长环境中添加1,2,3,4,5五甲基环戊二烯作为生长调节剂化学品，可以显着改善五羰基铁中铁的生长速率。在低于250℃的较低生长温度范围内，通过添加1,2,3,4,5五甲基环戊二烯降低铁的生长速率，而在250℃以上的温度下，铁的生长速率最多可增加一个数量级。大小。因此，使用酸性改性剂将铁沉积的有用温度范围从五羰基铁扩展到更高的温度。

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《Journal of Crystal Growth》 |1999年第3期|p.298-301|共4页
作者
P.A. Lane; P.J. Wright;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Metal CVD; Iron pentacarbonyl;

机译：金属CVD;五羰基铁;

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The use of 1,2,3,4,5 pentamethylcyclopentadiene as an in situ growth modifer chemical for the chemical vapour deposition of iron from iron pentacarbonyl

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