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Seed-layer induced growth of high-quality oriented ZnO films by a sol-gel process

机译:晶种层通过溶胶-凝胶法诱导生长高质量取向的ZnO薄膜

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摘要

A two-step process was developed to grow high-quality oriented ZnO films on Si (1 0 0) substrates, which included the pre-deposition of a very thin ZnO film (seed layer) by pulsed laser deposition and the subsequent sol-gel spin-coating of ZnO films. The effects of the seed layer on the orientation, crystallinity, and morphology of ZnO films were investigated. Results show that ZnO films on the seed layer exhibit a single (0 0 2) orientation, but that on the bare silicon substrate is multi-oriented. Compared with ZnO films on the bare silicon substrate, the crystallinity of ZnO films on the seed layer is enhanced obviously at high preheating temperatures above 500 degrees C. In addition, ZnO films on the seed layer have a denser internal structure than that on Si (1 0 0). These results indicate the seed layer may effectively induce the growth of high-quality oriented ZnO films by sol-gel. (c) 2006 Elsevier B.V. All rights reserved.
机译:开发了两步工艺以在Si(1 0 0)衬底上生长高质量的取向ZnO膜,该过程包括通过脉冲激光沉积和随后的溶胶-凝胶预沉积非常薄的ZnO膜(种子层)。 ZnO薄膜的旋涂。研究了晶种层对ZnO薄膜取向,结晶度和形貌的影响。结果表明,籽晶层上的ZnO薄膜具有单一(0 0 2)取向,而裸硅衬底上的ZnO薄膜则具有多重取向。与裸硅衬底上的ZnO薄膜相比,在500摄氏度以上的高预热温度下,种子层上ZnO薄膜的结晶度明显增强。此外,种子层上ZnO薄膜的内部结构比Si( 1 0 0)。这些结果表明,晶种层可以通过溶胶-凝胶有效地诱导高质量取向的ZnO薄膜的生长。 (c)2006 Elsevier B.V.保留所有权利。

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