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首页> 外文期刊>Journal of Crystal Growth >Synthesis and characterization of type-Ⅱ textured tungsten disulfide thin films by vdWR process with Pb interfacial layer as texture promoter
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Synthesis and characterization of type-Ⅱ textured tungsten disulfide thin films by vdWR process with Pb interfacial layer as texture promoter

机译：铅界面层为织构促进剂的vdWR工艺合成Ⅱ型织构二硫化钨薄膜

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摘要

The growth of type-Ⅱ textured tungsten disulfide (WS_2) thin films by solid state reaction between the spray deposited WO_3 and gaseous sulfur vapors with Pb interfacial layer has been studied. X-ray diffraction (XRD) technique is used to measure the degree of preferred orientation 'S' and texture of WS_2 films. Scanning electron microscopy (SEM) and transmission electron microscopy techniques have been used to examine the microstructure and morphology. The electronic structure and chemical composition were studied using X-ray photoelectron spectroscopy (XPS). The use of Pb interfacial layer for the promotion of type-Ⅱ texture in WS_2 thin films is successfully demonstrated. The presence of (003 l), (where l= 1, 2, 3, ...) family of planes in the XRD pattern indicates the strong type-Ⅱ texture of WS_2 thin films. The crystallites exhibit rhombohedral (3R) structure. The large value of 'S' (1086) prompts the high degree of preferred orientation as well. The stratum of crystallites with their basal plane parallel to the substrate surface is seen in the SEM image. The EDS and XPS analyses confirm the tungsten to sulfur atomic ratio as 1:1.75. We purport that Pb interfacial layer enhances type-Ⅱ texture of WS_2 thin films greatly.
机译：研究了通过喷涂沉积的WO_3与具有Pb界面层的气态硫蒸气之间的固相反应来生长Ⅱ型织构二硫化钨（WS_2）薄膜。 X射线衍射（XRD）技术用于测量WS_2薄膜的首选取向“ S”和织构程度。扫描电子显微镜（SEM）和透射电子显微镜技术已用于检查微观结构和形态。使用X射线光电子能谱（XPS）研究了电子结构和化学成分。成功地证明了Pb界面层在WS_2薄膜中促进Ⅱ型织构的应用。 X射线衍射图中（003 l）（其中l = 1、2、3，...）平面族的存在表明WS_2薄膜具有较强的Ⅱ型织构。微晶表现出菱形（3R）结构。 “ S”的较大值（1086）也会引起高度的首选方向。在SEM图像中可以看到基面平行于基底表面的微晶层。 EDS和XPS分析确认钨与硫的原子比为1：1.75。我们认为，Pb界面层大大增强了WS_2薄膜的Ⅱ型织构。

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