...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Effects of hydrogen on poly- and nano-crystallization of a-Si : H prepared by RF magnetron sputtering
【24h】

Effects of hydrogen on poly- and nano-crystallization of a-Si : H prepared by RF magnetron sputtering

机译：氢对射频磁控溅射制备的a-Si：H的多晶和纳米晶的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Effects of hydrogen species on the formation of polycrystalline silicon (poly-Si) deposited by RF magnetron sputtering were studied. In order to control the amount of Si-H bonds which affected crystallinity of Si films, inductive coupled plasma (ICP) was used with hydrogen during Si film deposition. Poly-Si films were fabricated by supplying hydrogen without generating ICP, while nanocrystalline Si was formed in amorphous Si films deposited with hydrogen and ICP. Si-H bonds formed during sputtering with hydrogen led the crystallization of Si films, but a large amount of Si-H bonds produced by ICP reduced the crystallization of Si. It is believed that Si-H bonds enhance the crystallization of the Si films since they increase the diffusion length of Si on the substrate surface by occupying the Si dangling bonds. However, excessive amount of Si-H bonds degraded the crystallinity of the Si films by interrupting the formation of Si-Si bonds. (c) 2006 Elsevier B.V. All rights reserved.
机译：研究了氢物种对射频磁控溅射沉积多晶硅（poly-Si）形成的影响。为了控制影响Si膜结晶度的Si-H键的数量，在淀积Si膜时将电感耦合等离子体（ICP）与氢一起使用。通过在不产生ICP的情况下提供氢来制造多晶硅膜，而在沉积有氢和ICP的非晶硅膜中形成纳米晶硅。用氢溅射期间形成的Si-H键导致Si膜的结晶，但是通过ICP产生的大量Si-H键减少了Si的结晶。据信，由于Si-H键通过占据Si悬空键而增加了Si在基板表面上的扩散长度，因此Si-H键增强了Si膜的结晶。然而，过量的Si-H键通过中断Si-Si键的形成而降低了Si膜的结晶度。 （c）2006 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号