Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn

著录项

• 来源
  《Journal of Crystal Growth》 |2006年第2期|p. 289-293|共5页
• 作者

  Shon Y; Jeon HC; Lee S; Lee SW; Kim DY; Kang TW; Kim EK; Yoon CS; Kim CK; Park YJ;

  展开▼
• 作者单位

  Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea;

  Hanyang Univ, Dept Phys, Seoul 133791, South Korea;

  Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea;

  Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea;

  Dankook Univ, Dept Appl Phys, Seoul 140714, South Korea;

  Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类 晶体学;
• 关键词

  metalorganic chemical vapor deposition; molecular beam epitaxy; magnetic materials; semiconducting indium phosphide; DILUTED MAGNETIC SEMICONDUCTOR; NEUTRAL MANGANESE ACCEPTOR; III-V SEMICONDUCTORS; ROOM-TEMPERATURE; FERROMAGNETISM; GAN;

  机译：金属有机化学气相沉积;分子束外延;磁性材料;磷化半导体;稀释的磁半导体;中性锰受体;III-V族半导体;室温;铁磁;GAN;