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首页> 外文期刊>Journal of Crystal Growth >InP-based quantum dash lasers for wide gain bandwidth applications
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InP-based quantum dash lasers for wide gain bandwidth applications

机译：基于InP的量子破折号激光器，用于宽增益带宽应用

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摘要

Self-assembled quantum dash (QDash) lasers based on InP with an emission wavelength of about 1.5 μ m were grown by molecular beam epitaxy with solid-state sources. Two different approaches were investigated to further extend the broad gain bandwidth of QDash structures. One approach is based on layer thickness variations in a stacked QDash structure with thick barriers to avoid vertical strain coupling. In the alternative structure, the barrier thickness is reduced to allow strain coupling which modifies automatically the QDash size from layer to layer. With both approaches, the gain bandwidth could be significantly increased in comparison to structures with a single QDash layer. However, lasers based on active regions with reduced barrier widths show additionally a significant improvement of the device performance. Ridge waveguide lasers based on this new material show continuous wave (cw) operation up to 75 ° C. At 20 ° C, a threshold current of 65 mA was obtained for 2 mm long devices with 2.5 μ m wide ridges. © 2005 Elsevier B.V. All rights reserved.
机译：利用固态源通过分子束外延生长了基于InP的自组装量子破折号（QDash）激光器，该激光器的发射波长约为1.5μm。研究了两种不同的方法来进一步扩展QDash结构的宽增益带宽。一种方法是基于具有厚壁垒的堆叠QDash结构中的层厚度变化，以避免垂直应变耦合。在替代结构中，减小势垒厚度以允许应变耦合，这会自动在层与层之间修改QDash大小。与两种方法相比，与具有单个QDash层的结构相比，增益带宽都可以显着增加。但是，基于具有减小的势垒宽度的有源区的激光器还显示出器件性能的显着改善。基于这种新材料的脊形波导激光器显示连续波（cw）的工作频率高达75＆DEG; C. 20岁时； C，对于具有2.5μm宽脊的2 mm长器件，获得65 mA的阈值电流。 ＆复制; 2005 Elsevier B.V.保留所有权利。

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