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首页> 外文期刊>Journal of Crystal Growth >Direct-write e-beam sub-micron domain engineering in liquid phase epitaxy (LPE) LiNbO_3 thin films and single crystal LiNbO_3
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Direct-write e-beam sub-micron domain engineering in liquid phase epitaxy (LPE) LiNbO_3 thin films and single crystal LiNbO_3

机译：液相外延（LPE）LiNbO_3薄膜和单晶LiNbO_3的直接写入电子束亚微米域工程

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摘要

We have demonstrated sub-micron domain (～200 nm) structures with a period ～750 nm and ～1.2 μm in liquid phase epitaxy (LPE) LiNbO_3 films on congruent LiNbO_3 substrates by using the direct-write e-beam domain engineering method. In comparison with single crystal congruent LiNbO_3 (CLN) and stoichiometric LiNbO_3 (SLN), we show that LPE LiNbO_3 (LPE LN) is the most promising material for producing superior domain regularities and finer domain sizes than single crystals. A physical model is presented to qualitatively explain the observed differences in structure and regularity of the induced periodic domains among the three different materials we studied. We postulate that the higher Li/Nb ratio in LPE LN than in CLN enhances domain inversion initiation. Also, we believe that the vanadium incorporation and distortion due to the lattice mismatch between films and substrates enhance electron localization, domain wall pinning and domain nucleation in LPE materials, giving rise to better structures.
机译：我们已经通过使用直接写入电子束域工程方法在全相LiNbO_3衬底上的液相外延（LPE）LiNbO_3薄膜中证明了周期为〜750 nm和〜1.2μm的亚微米域（〜200 nm）结构。与单晶一致的LiNbO_3（CLN）和化学计量的LiNbO_3（SLN）相比，我们显示LPE LiNbO_3（LPE LN）是最有前途的材料，可产生比单晶更好的畴规则性和更细的畴尺寸。提出了一个物理模型，以定性地解释我们研究的三种不同材料之间在感应周期域的结构和规则性上观察到的差异。我们假定，与在CLN中相比，LPE LN中更高的Li / Nb比可增强域反转起始。此外，我们认为，由于薄膜和基板之间的晶格失配，钒的掺入和变形会增强LPE材料中的电子定位，畴壁钉扎和畴核，从而产生更好的结构。

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