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首页> 外文期刊>Journal of Crystal Growth >The grain size effect of the Pb(Zr_(0.45)Ti_(0.55))O_3 thin films deposited on LaNiO_3-coated silicon by modified sol-gel process
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The grain size effect of the Pb(Zr_(0.45)Ti_(0.55))O_3 thin films deposited on LaNiO_3-coated silicon by modified sol-gel process

机译:改进的溶胶凝胶法在LaNiO_3涂层硅上沉积Pb(Zr_(0.45)Ti_(0.55))O_3薄膜的晶粒尺寸效应

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摘要

Highly (100) oriented PZT thin films with different grain sizes have been deposited on an LaNiO_3-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (100) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization.
机译:通过改进的溶胶-凝胶工艺,已将具有不同晶粒尺寸的高度(100)取向的PZT薄膜沉积在LaNiO_3涂层的硅基板上。定性地讨论了具有高(100)取向的薄膜的生长机理以及晶粒尺寸对薄膜介电和铁电性能的影响。介电和铁电性能的测量表明,大晶粒尺寸的薄膜具有较大的相对介电常数和较大的剩余极化率。

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