...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Simulation of GaN and InGaN p-i-n and n-i-n photo-devices
【24h】

Simulation of GaN and InGaN p-i-n and n-i-n photo-devices

机译：GaN和InGaN p-i-n和n-i-n光电器件的仿真

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Gallium nitride (GaN) and related materials have attracted an intense interest in their potential applications in high-power switching, high-temperature, and high-frequency device applications. A major advantage of the GaN system for optical applications is that the energy band gap can be reduced by alloying with InN. The InGaN alloy can provide a coverage from the near UV to the near infrared, including the visible spectrum. This research will provide the photonic and electrical properties of InGaN photo-devices by simulation. GaN and InGaN photo-devices, such as p-i-n and n-i-n devices, were simulated using ATHENA and ATLAS developed by Silvaco International, Inc. The spectral-responsivity and the dark current were evaluated. These simulation results are comparable to the experimental result by Kung et al. with a 400 x 400 um mesa structure of p-i-n GaN (SPIE 3287 (1998) 214). Since the heavily p-doping is still relatively hard to achieve currently, n-i-n photo-devices are evaluated and compared to p-i-n devices.
机译：氮化镓（GaN）和相关材料对其在高功率开关，高温和高频设备应用中的潜在应用引起了浓厚的兴趣。用于光学应用的GaN系统的主要优点是可以通过与InN合金化来减少能带隙。 InGaN合金可以提供从近紫外到近红外的覆盖范围，包括可见光谱。这项研究将通过仿真提供InGaN光电器件的光子和电学特性。使用Silvaco International，Inc.开发的ATHENA和ATLAS对GaN和InGaN光电器件（例如p-i-n和n-i-n器件）进行了仿真。对光谱响应度和暗电流进行了评估。这些模拟结果与Kung等人的实验结果相当。具有p-i-n GaN的400 x 400 um台面结构（SPIE 3287（1998）214）。由于目前仍然很难实现高浓度的p掺杂，因此需要评估n-i-n光电器件并将其与p-i-n器件进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号