Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

E.V. Yakovlev; R.A. Talalaev; Yu.N. Makarov; B.S. Yavich; W.N Wang

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Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

机译：GaN在AIX 200/4 RF-S水平反应器中的沉积行为

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In this paper, we report on a combined modeling and experimental analysis of the GaN deposition behavior in the horizontal AIX 200/4 RF-S reactor. The study was aimed at revealing the effect of the variations of the operating parameters on the growth rate and uniformity. Variations of the trimethylgallium and hydride flow rates, changes in the composition of the mixture supplied through the hydride inlet, and the total flow redistribution between two reactor inlets have been considered. To get an insight into the mechanisms governing the measured GaN growth rate alterations, a detailed three-dimensional modeling has been used. Application of the reactor model accounting for important features of the reactor design and utilizing advanced chemical models has allowed us to reproduce fairly well experimental data and to draw conclusions on the mechanisms governing the deposition process.

机译：在本文中，我们报告了水平AIX 200/4 RF-S反应器中GaN沉积行为的组合建模和实验分析。该研究旨在揭示操作参数变化对生长速率和均匀性的影响。已经考虑了三甲基镓和氢化物流速的变化，通过氢化物入口供应的混合物组成的变化以及两个反应器入口之间的总流量重新分配。为了深入了解控制所测量的GaN生长速率变化的机制，已使用了详细的三维模型。反应器模型的应用考虑了反应器设计的重要特征并利用先进的化学模型，使我们能够很好地再现实验数据，并就控制沉积过程的机理得出结论。

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来源
《Journal of Crystal Growth》 |2004年第3期|p.182-189|共8页
作者
E.V. Yakovlev; R.A. Talalaev; Yu.N. Makarov; B.S. Yavich; W.N Wang;
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作者单位

Soft-Impact Ltd., P.O. Box 83, St. Petersburg 194156, Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Computer simulation; A1. Heat and mass transfer; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;

机译：A1。计算机仿真;A1。传热传质;A3。金属有机气相外延;B1。氮化物;

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Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

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