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首页> 外文期刊>Journal of Crystal Growth >OMVPE of GaAsSbN for long wavelength emission on GaAs
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OMVPE of GaAsSbN for long wavelength emission on GaAs

机译：GaAsSbN的OMVPE可在GaAs上进行长波长发射

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GaAsSbN was grown by organometallic vapor phase epitaxy (OMVPE) as an alternative material to InGaAsN for long wavelength emission on GaAs substrates. OMVPE of GaAsSbN using trimethylgallium, 100% arsine, trimethylantimony, and 1,1-dimethylhydrazine was found to be kinetically limited at growth temperatures ranging from 520℃ to 600℃, with an activation energy of 10.4 kcal/mol. The growth rate was linearly dependent on the group Ⅲ flow and has a complex dependence on the group Ⅴ constituents. A room temperature photoluminescence wavelength of > 1.3 μm was observed for unannealed GaAs_(0.69)Sb_(0.3)N_(0.01). Low temperature (4 K) photoluminescence of GaAs_(0.69)Sb_(0.3)N_(0.01) shows an increase in FWHM of 2.4-3.4 times the FWHM of GaAs_(0.7)Sb_(0.3), a red shift of 55-77 meV, and a decrease in intensity of one to two orders of magnitude. Hall measurements indicate a behavior similar to that of InGaAsN, a 300 K hole mobility of 350 cm~2/V-s with a 1.0 x 10~(17)/cm~3 background hole concentration, and a 77 K. mobility of 1220cm~2/V-s with a background hole concentration of 4.8 x 10~(16)/cm~3. The hole mass of GaAs_(0.7)Sb_(0.3)/GaAs heterostructures was estimated at 0.37-0.40m_o, and we estimate an electron mass of 0.2-0.3m_o for the GaAs_(0.69)Sb_(0.3)N_(0.01)/GaAs system. The reduced exciton mass for GaAsSbN was estimated at about twice that found for GaAsSb by a comparison of diamagnetic shift vs. magnetic field.
机译：GaAsSbN通过有机金属气相外延（OMVPE）生长，作为InGaAsN的替代材料，可在GaAs衬底上进行长波长发射。发现使用三甲基镓，100％砷化氢，三甲基锑和1,1-二甲基肼的GaAsSbN的OMVPE在520℃至600℃的生长温度下动力学受限，活化能为10.4 kcal / mol。生长速度线性依赖于Ⅲ族的流动，而复杂地依赖于Ⅴ族的成分。对于未退火的GaAs_（0.69）Sb_（0.3）N_（0.01），观察到> 1.3μm的室温光致发光波长。 GaAs_（0.69）Sb_（0.3）N_（0.01）的低温（4 K）光致发光显示FWHM增加为GaAs_（0.7）Sb_（0.3）的FWHM的2.4-3.4倍，红移为55-77 meV ，强度降低一到两个数量级。霍尔测量表明其行为类似于InGaAsN，300 K空穴迁移率为350 cm〜2 / Vs，背景空穴浓度为1.0 x 10〜（17）/ cm〜3，77 K迁移率为1220cm〜2 / Vs，背景空穴浓度为4.8 x 10〜（16）/ cm〜3。 GaAs_（0.7）Sb_（0.3）/ GaAs异质结构的空穴质量估计为0.37-0.40m_o，我们估计GaAs_（0.69）Sb_（0.3）N_（0.01）/ GaAs的电子质量为0.2-0.3m_o系统。通过抗磁位移与磁场的比较，估计GaAsSbN的减少的激子质量约为GaAsSb的激子质量的两倍。

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