...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates
【24h】

In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates

机译：MOCVD生长（111）Si衬底上的AlN缓冲层期间的原位应力测量

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Stress evolution during MOCVD growth of AlN buffer layers and GaN epilayers on (111) Si substrates was investigated using in situ wafer curvature measurements in order to understand the impact of growth conditions on thin film stress. AlN layers up to 400 nm thick were deposited over a temperature range of 600-1100℃ at growth rates of 0.1-1 nm/s. In all cases, the growth stresses were tensile and the stress value did not change during growth. A sharp drop in the value of the tensile growth stress is observed between 900℃ and 800℃ from > 1GPa to <0.4GPa. This drop is due a transition in the structure of the film from an epitaxially oriented crystalline film above 900℃ to a highly defective polycrystalline film at 600℃. At a constant temperature however, the tensile stress in the film remained relatively constant with a change in growth rate. The origin of these stress differences and their impact on residual stress in GaN epitaxial layers grown on Si are discussed.
机译：为了了解生长条件对薄膜应力的影响，使用原位晶片曲率测量研究了（111）Si衬底上AlN缓冲层和GaN外延层在MOCVD生长过程中的应力演化。在600-1100℃的温度范围内以0.1-1 nm / s的生长速率沉积厚度达400 nm的AlN层。在所有情况下，生长应力均为拉伸应力，并且应力值在生长过程中没有变化。在900℃至800℃之间，从> 1GPa到<0.4GPa，拉伸生长应力的值急剧下降。该下降是由于膜的结构从900℃以上的外延取向结晶膜转变为600℃下的高缺陷多晶膜的转变。然而，在恒定温度下，膜中的拉伸应力随着生长速率的变化而保持相对恒定。讨论了这些应力差异的起因及其对在Si上生长的GaN外延层中的残余应力的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号