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首页> 外文期刊>Journal of Crystal Growth >Vapour pressure and heat capacities of metal organic precursors, Y(thd)_3 and Zr(thd)_4
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Vapour pressure and heat capacities of metal organic precursors, Y(thd)_3 and Zr(thd)_4

机译:金属有机前驱体Y(thd)_3和Zr(thd)_4的蒸气压和热容量

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摘要

The vapour pressure of two metal organic precursors, Y(thd)_3 [CAS RN: 15632-39-0] and Zr(thd)_4 [CAS RN: 18865-74-2] (thd = 2,2,6,6-tetramethylheptane-3,5-dionate), used for metal organic chemical vapour deposition of high-temperature superconductor layers, was measured by a static method in the technologically important temperature range from 395 to 465 K. The experimental data were fitted by simple two-parameter equation and represent updated values of the present day high-purity materials providing comparison with the previously published data. Heat capacities in the temperature range from 308 to 565 K are also reported.
机译:两种金属有机前体的蒸气压Y(thd)_3 [CAS RN:15632-39-0]和Zr(thd)_4 [CAS RN:18865-74-2](thd = 2,2,6,6 -四甲基庚烷(3,5-二酸酯)用于高温超导体层的金属有机化学气相沉积,是通过静态方法在技术上重要的温度范围395至465 K下进行测量的。参数方程式,代表了当今高纯度材料的更新值,可与以前发布的数据进行比较。还报道了温度范围为308至565 K的热容量。

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