Morphology of ZnO grown by MOCVD on sapphire substrates

C. Munuera; J. Zuniga-Perez; J.F. Rommeluere; V. Sallet; R. Triboulet; F. Soria; V. Munoz-Sanjose; C. Ocal

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Morphology of ZnO grown by MOCVD on sapphire substrates

机译：MOCVD在蓝宝石衬底上生长的ZnO的形貌

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摘要

A quantitative roughness and microstructural analysis of ZnO grown on sapphire by atmospheric metalorganic chemical vapor deposition (MOCVD) is presented. In order to investigate the influence of the substrate on the morphology, different sapphire orientations have been employed. Scanning force microscopy data have been analyzed for a variety of thicknesses to elucidate, if possible, the growth mechanisms involved in the growth process. Our study reveals significant differences between morphologies depending on whether the substrate surface exhibits steps (misoriented a-, c- and r-planes) or not (m-plane); however, no major differences on the calculated roughness coefficients have been found.

机译：提出了通过大气金属有机化学气相沉积（MOCVD）在蓝宝石上生长的ZnO的定量粗糙度和微观结构分析。为了研究衬底对形态的影响，已经采用了不同的蓝宝石取向。已对扫描力显微镜数据进行了各种厚度的分析，以尽可能阐明生长过程中涉及的生长机理。我们的研究揭示了不同形态之间的显着差异，这取决于基材表面是否呈现台阶（a平面，c平面和r平面取向不正确）（m平面）。然而，在计算出的粗糙度系数上没有发现主要差异。

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来源
《Journal of Crystal Growth》 |2004年第3期|p.70-78|共9页
作者
C. Munuera; J. Zuniga-Perez; J.F. Rommeluere; V. Sallet; R. Triboulet; F. Soria; V. Munoz-Sanjose; C. Ocal;
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作者单位

Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid, Spain;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. atomic force microscopy; A1. crystal morphology; A3. metalorganic chemical vapor deposition; B1. oxides; B1. zinc compounds; B2. semiconducting Ⅱ-Ⅵ materials;

机译：A1。原子力显微镜;A1。晶体形态;A3。金属有机化学气相沉积;B1。氧化物;B1。锌化合物;B2。半导体Ⅱ-Ⅵ材料;

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Morphology of ZnO grown by MOCVD on sapphire substrates

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