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首页> 外文期刊>Journal of Crystal Growth >Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
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Study on the perfection of in situ P-injection synthesis LEC-InP single crystals

机译：原位P注入合成LEC-InP单晶的研究

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摘要

Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in <100>-direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10~4 cm~(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects.
机译：通过快速P注入原位合成液体封装的Czochralski（LEC）方法，在富P条件下，将直径最大为4英寸的未掺杂，S掺杂和Fe掺杂InP晶体拉至<100>方向。高速光致发光映射，蚀刻坑密度（EPD）映射和扫描电子显微镜已用于表征单晶锭的样品。研究和比较了这些样品的位错和电均质性。通过控制温度场和固液界面形状，通过快速P注入合成LEC方法成功地生长了4英寸低EPD InP单晶。晶锭晶片上的EPD小于5 x 10〜4 cm〜（-2）。在富P的LEC生长的InP铸锭中观察到具有孔中心的簇缺陷。这些缺陷在晶片上不规则地分布，并被高位错浓度包围。这些缺陷会影响整个晶片上PL强度的均匀性。

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