Optimized growth of BGaAs by molecular beam epitaxy

M.E. Groenert; R. Averbeck; W. Hoesler; M. Schuster; H. Riechert

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Optimized growth of BGaAs by molecular beam epitaxy

机译：通过分子束外延优化BGaAs的生长

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B_xGa_((1-x))As alloys have been grown by molecular beam epitaxy. Reducing growth temperature below 540℃ and increasing the Ⅴ/Ⅲ flux ratio above 20 improved boron incorporation in the epitaxial layers while preserving crystal quality. Higher growth temperatures and lower Ⅴ/Ⅲ ratios lead to significant amounts of B incorporation on interstitial lattice sites. With optimized growth conditions, pseudomorphic B_xGa_((1-x))As films with x = 0.078 have been grown with good crystal quality and no detectable interstitial B incorporation.

机译：B_xGa _（（1-x））As合金是通过分子束外延生长的。将生长温度降低到540℃以下，将Ⅴ/Ⅲ通量比提高到20以上，可以在保持晶体质量的同时改善外延层中硼的结合。较高的生长温度和较低的Ⅴ/Ⅲ比值导致间隙晶格位点上大量掺入B。通过优化的生长条件，已生长出x = 0.078的假晶B_xGa _（（1-x））As膜，具有良好的晶体质量并且没有可检测的间隙B掺入。

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来源
《Journal of Crystal Growth》 |2004年第3期|p.123-127|共5页
作者
M.E. Groenert; R. Averbeck; W. Hoesler; M. Schuster; H. Riechert;
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作者单位

Infineon Technologies AG, Corporate Research, Otto-Hahn Ring 6, D-81739 Munich, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. growth models; A3. molecular beam epitaxy; B1. BGaAs;

机译：A1。增长模型;A3。分子束外延;B1。砷化镓;

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Optimized growth of BGaAs by molecular beam epitaxy

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