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首页> 外文期刊>Journal of Crystal Growth >Characterization and leakage current density of radio frequency magnetron sputtered nanocrstalline SrTiO_3 thin films
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Characterization and leakage current density of radio frequency magnetron sputtered nanocrstalline SrTiO_3 thin films

机译:射频磁控溅射纳米晶SrTiO_3薄膜的表征及漏电流密度

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摘要

The nanocrystalline SrTiO_3 thin films have been successfully deposited by a radio frequency magnetron sputtering. The perovskite phase was obtained for the SrTiO_3 deposited on Pt/Ti/SiO_2/Si substrates at 500℃. The peak intensity of XRD increases with increasing thickness of the SrTiO_3 films. The morphology of the SrTiO_3 thin films deposited at 500℃ is composed of granular crystallites with a size of about 45.0 nm for a thickness of 450.0 nm. The films thickness of 150.0 and 450.0 nm had the leakage current density (mid 10~(-6)-10~(-9) A/cm~2)-voltage (5V) characteristic which is suitable for a dielectric films of dynamic random access memory capacitor.
机译:纳米晶SrTiO_3薄膜已通过射频磁控溅射成功沉积。在500℃下,将SrTiO_3沉积在Pt / Ti / SiO_2 / Si基体上得到钙钛矿相。 XRD的峰值强度随着SrTiO_3膜厚度的增加而增加。在500℃沉积的SrTiO_3薄膜的形貌由尺寸为45.0 nm的晶粒微晶组成,厚度为450.0 nm。膜厚150.0和450.0 nm具有漏电流密度(10〜(-6)-10〜(-9)A / cm〜2)-电压(5V)的特性,适用于动态随机电介质膜访问存储电容器。

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