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首页> 外文期刊>Journal of Crystal Growth >Low-temperature fabrication of Pb(Zr_(0.52)Ti_(0.48))O_3 films using a new chemical solution deposition method without post-annealing
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Low-temperature fabrication of Pb(Zr_(0.52)Ti_(0.48))O_3 films using a new chemical solution deposition method without post-annealing

机译:使用新的化学溶液沉积方法在不进行后退火的情况下低温制备Pb(Zr_(0.52)Ti_(0.48))O_3薄膜

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摘要

Pb(Zr_(0.52)Ti_(0.48))O_3 (PZT) films have been fabricated on Pt/Ti/SiO_2/Si substrates with a new chemical solution-deposition technique, in which each layer of PbZrO_3 (PZ) and PbTiO_3 (PT) was heated to 600℃ as soon as it was spin coated. The fabrication of the homogeneous PZT film was finished through the reaction between the PT and PZ layers and without post-annealing. By surveying the variations of the surface micrographs during the deposition process, an island-column hybrid growth mode could be concluded. The low-temperature fabrication brings about enhanced fatigue resistance because of the suppression of the formation of the oxygen vacancies. Measurements of the ferroelectric properties suggest a promising application for the ferroelectric memory devices.
机译:采用新的化学溶液沉积技术在Pt / Ti / SiO_2 / Si衬底上制备了Pb(Zr_(0.52)Ti_(0.48))O_3(PZT)膜,其中PbZrO_3(PZ)和PbTiO_3(PT旋涂后立即将其加热至600℃。均相PZT膜的制造是通过PT和PZ层之间的反应完成的,而无需进行后退火。通过调查沉积过程中表面显微照片的变化,可以得出岛-柱混合生长模式。低温制造由于抑制了氧空位的形成而提高了耐疲劳性。铁电性能的测量表明,铁电存储器件有希望的应用。

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