Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth

Th. Wetzel; J. Virbulis; A. Muiznieks; W. von Ammon; E. Tomzig; G. Raming; M. Weber

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Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth

机译：工业300 mm CZ Si晶体生长中生长界面形状的预测

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摘要

A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300 mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300 mm Si CZ growth experiments with 200 kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.

机译：提出了一种模型方法，用于修改28英寸Si CZ坩埚的湍流熔体流动模拟中的有效导热率，这有助于克服工业300 mm Si CZ生长的生长界面形状预测中的不足。该模型已被合并到CZ模拟工具中，该工具基于用于整体传热的模拟软件代码FEMAG和用于湍流熔体流动模拟的CFD-ACE。将模型预测结果与在200英寸坩埚中以200公斤装料重量进行300毫米Si CZ生长实验的结果进行比较，其生长参数范围为标准工业流程所涵盖的范围。该模型是一种工程方法。尽管如此，还是基于现象学简要讨论了一些物理背景，包括最近模型实验的结果。

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来源
《Journal of Crystal Growth》 |2004年第3期|p.34-39|共6页
作者
Th. Wetzel; J. Virbulis; A. Muiznieks; W. von Ammon; E. Tomzig; G. Raming; M. Weber;
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作者单位

Wacker Siltronic AG, Burghausen, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. fluid flows; A1. heat transfer; A2. czochralski method; A2. single crystal growth; B2. semiconducting silicon;

机译：A1。流体流动;A1。传热;A2。 czochralski方法;A2。单晶生长;B2。半导体硅;

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机译：使用实验和整体模拟预测CZ Si晶体生长过程中的固液界面形状
2. Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth [J] . D.P. Lukanin, V.V. Kalaev, Yu.N. Makarov, Journal of Crystal Growth . 2004,第1a3期

机译：硅CZ生长中传热模拟和熔体晶体界面形状预测的进展
3. Growth and stress analysis of necks for 300 mm CZ silicon single crystals [J] . H. Tu, J. Cheng, Q. Chang, Microelectronic Engineering . 2001,第1a2期

机译：300 mm CZ硅单晶的颈部生长和应力分析
4. Prediction of Melt-Crystal Interface Shape and Melt Convection in a Large-scale CZ-Si Growth System Using RANS and LES Methods in Global Simulation. [C] . Xin. Liu, Lijun. Liu, Zaoyang. Li, ISTC/CSTIC 2009 (CISTC) . 2009

机译：在全局模拟中使用RANS和LES方法预测大型CZ-Si生长系统中的熔体-晶体界面形状和熔体对流。
5. Finite element analysis of transport processes and interface shapes in floating zone crystal growth. [D] . Gulati, Sandeep. 1995

机译：浮区晶体生长中传输过程和界面形状的有限元分析。
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7. Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects [O] . Ho Yong Shin, Su Min Hong, Jong Won Yoon, 2013

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Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth

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