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首页> 外文期刊>Journal of Crystal Growth >Absorption and Raman scattering processes in InN films and dots
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Absorption and Raman scattering processes in InN films and dots

机译：InN薄膜和点中的吸收和拉曼散射过程

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摘要

We demonstrate that the phonon frequencies that are reported in the literature for indium nitride (InN), films are all consistently correlated to the strain state of the material. Raman spectroscopy measurements and X-ray investigations of large size InN quantum dots grown on c-plane GaN are combined, which show these frequencies to experience a blue shift with increasing compression. The InN dots are weakly strained, most probably due to the formation of dislocations at the InN/GaN interface. We report the observation of a broad absorption in the 1.25 eV region that is typical of thin InN films. Such a feature we attribute to light absorption at the energy of the fundamental direct band gap of InN, while we attribute the low energy 650-800 meV photoluminescence to an extrinsic recombination process analogous to the processes that produce the blue band in AlN and the yellow band in GaN. (C) 2004 Elsevier B.V. All rights reserved.
机译：我们证明了在文献中针对氮化铟（InN）薄膜报道的声子频率均与材料的应变状态始终相关。拉曼光谱测量和在c面GaN上生长的大尺寸InN量子点的X射线研究相结合，显示出这些频率随着压缩的增加而发生蓝移。 InN点的应变很弱，很可能是由于在InN / GaN界面处形成了位错。我们报告观察到在1.25 eV区域有较宽的吸收，这是InN薄膜的典型特征。我们将这种特性归因于InN基本直接带隙能量处的光吸收，而我们将低能量650-800 meV的光致发光归因于类似于在AlN中产生蓝色带和黄色的过程的外在复合过程GaN中的能带。 （C）2004 Elsevier B.V.保留所有权利。

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