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首页> 外文期刊>Journal of Crystal Growth >Optical properties and electronic structure of InN and In-rich group III-nitride alloys
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Optical properties and electronic structure of InN and In-rich group III-nitride alloys

机译：InN和富In III族氮化物合金的光学性质和电子结构

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摘要

The optical properties and electronic structure of molecular-beam epitaxy grown InN and In-rich group III-nitride alloy films are studied. The band gap of InN is determined to be 0.7 eV by optical absorption, photoluminescence, and photo-modulated reflectance. The band gap exhibits weaker temperature and pressure dependencies than those of GaN and AIN. The narrow band gap leads to a strong k(.)p interaction, resulting in a non-parabolic conduction band, which is studied by the free electron concentration dependence of the electron effective mass. Highly n-type InN exhibits a large Burstein-Moss shift in the optical absorption edge; this effect may be responsible for the 1.9 eV band gap reported previously for some degenerately doped InN films. The band gap bowing parameters of the InGaN and InAlN alloy systems are determined. The band offset of InN with other group III-nitrides is presented and its effect on p-type doping is discussed. (C) 2004 Elsevier B.V. All rights reserved.
机译：研究了分子束外延生长的InN和富In的III族氮化物合金薄膜的光学性质和电子结构。通过光吸收，光致发光和光调制反射率将InN的带隙确定为0.7eV。带隙比GaN和AIN具有更弱的温度和压力依赖性。窄带隙导致强k（.p）相互作用，从而产生非抛物线型导带，这是通过电子有效质量的自由电子浓度依赖性来研究的。高度n型的InN在光吸收边缘表现出较大的Burstein-Moss位移；这种效应可能是先前报道的某些简并掺杂的InN薄膜的1.9 eV带隙的原因。确定了InGaN和InAlN合金系统的带隙弯曲参数。介绍了InN与其他III族氮化物的能带偏移，并讨论了其对p型掺杂的影响。 （C）2004 Elsevier B.V.保留所有权利。

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