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首页> 外文期刊>Journal of Crystal Growth >Ultrafast carrier dynamics in InN epilayers
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Ultrafast carrier dynamics in InN epilayers

机译：InN外延层中的超快载流子动力学

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摘要

Ultrafast differential transmission measurements on a series of InN epilayers, grown by molecular beam epitaxy, have been employed to determine the carrier lifetimes and to probe the carrier recombination dynamics at room temperature. Differential transmission spectra reveal a peak energy of similar to0.7eV on these samples, supporting the existence of the narrow band gap of InN. In addition, we observed a fast initial hot carrier cooling followed by a slow recombination process after pulse excitation. Carrier lifetimes ranging from 48 ps to 1.3 ns have been measured in these samples. An inverse proportionality between the carrier lifetime and the free-electron concentration was observed, suggesting that the donor-like defects or impurities may stimulate a formation of non-radiative recombination centers, reducing the carrier lifetime. (C) 2004 Elsevier B.V. All rights reserved.
机译：通过分子束外延生长的一系列InN外延层的超快差分传输测量已用于确定载流子寿命并探测室温下的载流子重组动力学。差分透射光谱显示这些样品的峰值能量接近0.7eV，支持了InN窄带隙的存在。此外，我们观察到快速的初始热载流子冷却，然后在脉冲激发后缓慢的重组过程。这些样品的载流子寿命为48 ps至1.3 ns。观察到载流子寿命与自由电子浓度成反比，这表明供体样缺陷或杂质可能会刺激非辐射复合中心的形成，从而缩短了载流子寿命。 （C）2004 Elsevier B.V.保留所有权利。

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