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首页> 外文期刊>Journal of Crystal Growth >Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(1 1 1)
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Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(1 1 1)

机译：热退火对Si（1 1 1）上InGaN / GaN LED特性的影响

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摘要

We investigate the activation behaviour of magnesium-doped GaN top contact layers and its influence on InGaN/ GaN light-emitting diode structures grown by metal organic chemical vapour phase epitaxy (MOVPE). The LED structures were heat treated at 700℃ up to 16 min in an oxygen ambient. Analysis was performed by photoluminescence and cathodoluminescence microscopy measurements (CL) and the results are correlated with capacitance-voltage measurements. It is observed that the donor-acceptor pair band luminescence drastically decreases in the first minute of annealing. Additionally, as a result of annealing, the hole concentration increases by a factor of more than 5. The InGaN-MQW luminescence shows no evident change due to the heat treatment. CL measurements reveal varying disturbed luminescence homogeneity in the lateral dimension for the high- and low-energy side of the InGaN luminescence. Top view CL maps show that the luminescence intensity is distributed inhomogeneously in the as-grown and annealed samples.
机译：我们研究了镁掺杂的GaN顶部接触层的活化行为及其对金属有机化学气相外延（MOVPE）生长的InGaN / GaN发光二极管结构的影响。在氧气环境中，将LED结构在700℃下热处理长达16分钟。通过光致发光和阴极发光显微镜测量（CL）进行分析，结果与电容-电压测量相关。观察到在退火的第一分钟，供体-受体对的能带发光急剧降低。另外，作为退火的结果，空穴浓度增加了5倍以上。由于热处理，InGaN-MQW发光没有明显变化。 CL测量揭示了InGaN发光的高能和低能侧在横向尺寸上变化的扰动发光均匀性。顶视图CL图显示发光强度在生长和退火的样品中不均匀地分布。

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