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首页> 外文期刊>Journal of Crystal Growth >Magnetic properties of Mn-implanted n-type Ge
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Magnetic properties of Mn-implanted n-type Ge

机译:锰注入的n型Ge的磁性

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Mn~+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100keV with a dose of 3 x 10~(16) cm~(-2). Subsequent annealing was performed on the samples at 400℃ and 600℃ in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) Mn_xGei_(1-x) after annealing may account for the ferromagnetic behavior in the annealed samples.
机译:在室温下,以100keV的能量以3 x 10〜(16)cm〜(-2)的剂量将Mn〜+离子注入n型Ge(1 1 1)单晶中。随后在流动的氮气气氛中在400℃和600℃对样品进行退火。样品的磁性能已通过在室温下通过交替梯度磁强计进行了研究。通过俄歇电子能谱研究了退火后样品的组成性能,并通过X射线衍射测量分析了结构性能。磁化测量显示退火样品的室温铁磁性。由成分和结构性质支持的磁性分析表明,退火后形成稀释的磁性半导体(DMS)Mn_xGei_(1-x)可以解释退火样品中的铁磁行为。

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