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首页> 外文期刊>Journal of Crystal Growth >Bismuth a new dopant for GaN films grown by molecular beam epitaxy―surfactant effects, formation of GaN_(1-x)Bi_x alloys and co-doping with arsenic
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Bismuth a new dopant for GaN films grown by molecular beam epitaxy―surfactant effects, formation of GaN_(1-x)Bi_x alloys and co-doping with arsenic

机译：铋是通过分子束外延生长表面活性剂作用，形成GaN_（1-x）Bi_x合金并与砷共掺杂的新型GaN薄膜掺杂剂

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摘要

We have investigated the influence of an additional bismuth flux during growth on the properties of GaN films prepared by plasma-assisted molecular beam epitaxy (MBE). A wide range of bismuth fluxes have been used, the highest Bi flux was larger than the flux of Ga. We have demonstrated that using a Bi flux during the growth of GaN by MBE at a temperature ～800℃ improves the surface morphology of the films and decreases the deep emission. We have demonstrated for the first time the growth of GaN_(1-x)Bi_x alloys by MBE, the Bi concentration was small and increased with decreasing growth temperature. We have studied the influence of an additional bismuth flux on the growth of As-doped GaN layers and observed an increase of blue emission from the layers at some optimum range of Bi fluxes. All the results allow us to conclude that Bi may be a potential new dopant for the growth of GaN by MBE.
机译：我们已经研究了在生长过程中附加的铋通量对通过等离子体辅助分子束外延（MBE）制备的GaN膜性能的影响。使用了各种各样的铋助熔剂，最高的Bi助熔剂比Ga的助熔剂大。我们已经证明，在〜800℃的温度下通过MBE生长GaN期间使用Bi助熔剂可以改善薄膜的表面形态。并减少深发射。我们首次证明了MBE可以生长GaN_（1-x）Bi_x合金，Bi浓度很小，并且随着生长温度的降低而增加。我们已经研究了额外的铋通量对掺As GaN层的生长的影响，并观察到在某些Bi通量的最佳范围内，该层的蓝光发射增加。所有的结果使我们得出结论，Bi可能是MBE生长GaN的潜在新掺杂剂。

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