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首页> 外文期刊>Journal of Crystal Growth >Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry
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Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry

机译：使用SiC吸收边的原位光谱反射法测量衬底温度

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摘要

AlGaN/GaN microwave HFET layer structures are grown on sapphire and semi-insulating SiC substrates by MOVPE at substrate temperatures in the range 1000―1100℃. Growth conditions such as growth rate and effective Ⅴ/Ⅲ ratio are substrate temperature dependent, as are many of the ultimate device characteristics. A reliable method of measuring the actual substrate temperature has yet to be established. Direct measurement of the substrate temperature in an MOVPE chamber is complicated by the following issues: (ⅰ) decoupling of the thermocouple from the substrate; (ⅱ) changes in substrate emissivity during heating and growth; (ⅲ) gradual coating of the chamber and optical ports causing a drift in thermal properties and pyrometer reading. We report a method of referencing the substrate temperature, which avoids these problems by monitoring the shift in the absorption edge of a SiC substrate using in situ spectral reflectometry. This technique enables the actual substrate temperature to be reproduced to within 10℃ run to run.
机译：通过MOVPE在1000〜1100℃的衬底温度下，在蓝宝石和半绝缘SiC衬底上生长AlGaN / GaN微波HFET层结构。诸如生长速率和有效Ⅴ/Ⅲ比之类的生长条件以及许多最终的器件特性都取决于衬底温度。测量实际基板温度的可靠方法尚未建立。由于以下问题，在MOVPE腔室中直接测量衬底温度变得很复杂：（ⅰ）热电偶与衬底的去耦； （ⅱ）加热和生长过程中底物发射率的变化； （ⅲ）腔室和光学端口的逐渐涂层会引起热性能和高温计读数的漂移。我们报告了一种参考衬底温度的方法，该方法通过使用原位光谱反射法监测SiC衬底吸收边缘的偏移来避免这些问题。这项技术使实际的基板温度可以连续运行至10℃以内。

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