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Characteristics of large-sized Ce:YAG scintillation crystal grown by temperature gradient technique

机译:温度梯度技术生长的大型Ce:YAG闪烁晶体的特性

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For the first time, the highly transparent yellow Ce:YAG scintillation crystal with a diameter of 3 in has been grown by the temperature gradient technique (TGT). The segregation coefficient of Ce ions in 0.8 at% doped TGT-Ce:YAG crystal determined by the ICP-AES method was 0.082, and the Ce distribution along the [111] growth axis was also investigated. The main macroscopic defects such as striations, side cores, bubbles, inclusions and stress birefringence were observed in as-grown Ce:YAG crystal by means of cross-polarized light microscope observation. The results show that the main defects such as bubbles, inclusions and stress birefringence mainly existed near the crystal peripheral edges.
机译:首次通过温度梯度技术(TGT)生长了直径3 in的高度透明的黄色Ce:YAG闪烁晶体。通过ICP-AES方法测定的0.8原子%掺杂的TGT-Ce:YAG晶体中Ce离子的偏析系数为0.082,并且还研究了沿[111]生长轴的Ce分布。通过交叉偏振光显微镜观察,在生长的Ce:YAG晶体中观察到主要的宏观缺陷,例如条纹,侧芯,气泡,夹杂物和应力双折射。结果表明,气泡,夹杂物和应力双折射等主要缺陷主要存在于晶体外围边缘附近。

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