Hot wall epitaxy of high-quality CdTe/Si(111)

Georgi M. Lalev; Jifeng Wang; Seishi Abe; Katashi Masumoto; Minoru Isshiki

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Hot wall epitaxy of high-quality CdTe/Si(111)

机译：高质量CdTe / Si（111）的热壁外延

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Cadmium telluride (111) epitaxial layers were directly grown by hot wall epitaxy (HWE) on the hydrogen-terminated Si(111) substrate without any preheating treatment. Low-temperature photoluminescence and four-crystal rocking curves X-ray diffraction (XRD) were used to establish the optimum growth conditions for HWE of CdTe/Si(111). Two-step growth regime was originally designed for obtaining high-quality CdTe crystal epilayers for further fabrication of Hg_(1-x)Cd_xTe infrared detectors. Four-crystal rocking curves XRD data indicate significantly improvement in the crystal quality after applying the two-step growth regime, and the best full-width at half-maximum value of 118 arcsec was obtained for 5 μm thick epilayer.

机译：碲化镉（111）外延层通过热壁外延（HWE）直接在氢封端的Si（111）衬底上生长，无需任何预热处理。低温光致发光和四晶体摇摆曲线X射线衍射（XRD）用于建立CdTe / Si（111）HWE的最佳生长条件。最初设计了两步生长机制，以获取用于进一步制造Hg_（1-x）Cd_xTe红外探测器的高质量CdTe晶体外延层。四晶体摇摆曲线XRD数据表明，应用两步生长方案后，晶体质量有了显着改善，对于5μm厚的外延层，在半最大值为118 arcsec时获得了最佳的全幅。

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来源
《Journal of Crystal Growth》 |2003年第2期|p.20-26|共7页
作者
Georgi M. Lalev; Jifeng Wang; Seishi Abe; Katashi Masumoto; Minoru Isshiki;
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作者单位

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 1-1, Katahira 2-chome, Aoba-ku, Sendai 980-8577, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. hot wall epitaxy; B2. semiconducting Ⅱ-Ⅵ materials;

机译：A3。热壁外延;B2。半导体Ⅱ-Ⅵ材料;

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2. Hot wall epitaxy of Sb_2Te_3 layers: coherent hetero-epitaxy on InAs(111) and Sb substitution in Cu-mediated growth [J] . Y Takagaki, B Jenichen, U Jahn, Semiconductor science and technology . 2013,第2期

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3. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy [J] . SUN Bing, CHANG Hu-Dong, LU Li, 中国物理快报：英文版 . 2012,第003期

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4. Growth and evaluation of CdTe/Si (111) by hot wall epitaxy [C] . Georgi M. Lalev, Jifeng Wang, Seishi Abe, International Symposium on Compound Semiconductors . 2003

机译：热墙外延的CDTE / SI（111）的生长和评价
5. Effect of Si substrate orientation on the quality of CdTe selective growth on Si(111) and Si(211) substrates via closed-space sublimation (CSS) without the use of a mask [D] . Najera, Aryzbe 2015

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8. Development of 1.3 Micron and 1.55 Micron LPE (Liquid Phase Epitaxy) and MOCVD (Metal-Organic Chemical Vapor Deposition) HgCdTe Avalanche Photodiodes [R] . Chu, M. 1985

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Hot wall epitaxy of high-quality CdTe/Si(111)

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