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首页> 外文期刊>Journal of Crystal Growth >Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy
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Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy

机译：两粒子生长系统的直接冷凝建模：应用于氢化物气相外延生长的GaAs

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摘要

A new phenomenological model for the growth of GaAs in the GaCl/AsH_3/HCl/H_2 vapour phase system is developed. The surface growth kinetics are modelled by taking into account the mechanisms of As and GaCl adsorption and chlorine desorption by H_2 into HCl. Two ad-species AsGaCl and AsGa interact on the surface through a reversible reaction, which is described through a modified two-particle Burton, Cabrera and Frank model. Kinetics data are determined by synthesising experimental and computed results. It is shown that when surface diffusion limitations can be neglected, the growth rate is reduced to a one-particle-like direct condensation expression, weighted by a sticking coefficient which takes into account the desorption frequency of the precursor AsGaCl and its reversible transformation into the crystal particle AsGa. Variations of the growth rate are discussed as a function of the ad-species surface coverage ratios and of the supersaturation of the vapour phase.
机译：建立了GaCl / AsH_3 / HCl / H_2气相体系中GaAs生长的新现象学模型。通过考虑As和GaCl吸附以及H_2将氯解吸到HCl中的机理来模拟表面生长动力学。两种ad-AsAsGaCl和AsGa通过可逆反应在表面相互作用，这通过改进的两粒子Burton，Cabrera和Frank模型进行描述。通过综合实验和计算结果来确定动力学数据。结果表明，当可以忽略表面扩散限制时，生长速率降低为单颗粒状直接缩合表达式，并由黏附系数加权，该黏附系数考虑到了前驱体AsGaCl的解吸频率及其可逆转化为二价砷。晶体颗粒AsGa。讨论了增长率与ad-specs表面覆盖率和气相过饱和度的函数关系。

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