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首页> 外文期刊>Journal of Crystal Growth >Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy
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Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy

机译：氢化物气相外延法在蓝宝石衬底上GaN的成核和初始生长动力学

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The nucleation and initial growth kinetics of GaN on sapphire grown using hydride vapor phase epitaxy technique were measured over a broad range of typically employed growth conditions. GaN nucleation and growth were investigated by a series of short time growth and quench experiments. Atomic force microscopy was used to examine the island density, size, and shape as a function of growth time and substrate temperature. The nucleation temperatures were studied over the range of 985-1100℃. As the temperature increased, the island density decreased due to adatom desorption and higher surface diffusion rates. The initial growth islands transformed from an irregular shape to a hexagonal shape and secondary nucleation was observed as the temperature increased. The activation energy for adatom surface diffusion was estimated to be ～2.3 eV on the nitridated (0001) sapphire. At high temperatures (≤1050℃), different surface processes, including adatom desorption and island mobility were taking place.
机译：在广泛使用的典型生长条件范围内，测量了使用氢化物​​气相外延技术在蓝宝石上生长的GaN的成核和初始生长动力学。通过一系列短时生长和淬火实验研究了GaN的成核和生长。原子力显微镜用于检查岛密度，大小和形状与生长时间和底物温度的关系。研究了成核温度在985-1100℃范围内。随着温度的升高，由于原子的解吸和较高的表面扩散速率，岛密度降低。随着温度升高，观察到初始生长岛从不规则形状转变为六边形形状，并观察到二次成核。氮化（0001）蓝宝石上吸附原子表面扩散的活化能估计约为2.3 eV。在高温（≤1050℃）下，发生了不同的表面过程，包括吸附原子解吸和岛迁移。

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