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首页> 外文期刊>Journal of Crystal Growth >Vertical gradient freezing of doped gallium-antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring
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Vertical gradient freezing of doped gallium-antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring

机译：使用浸没式加热器生长和电磁搅拌对掺杂的锑化锑镓半导体晶体进行垂直梯度冻结

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摘要

An investigation of the melt growth of uniformly doped gallium-antimonide (GaSb) semiconductor crystals as well as other Ⅲ-Ⅴ alloy crystals with uniform composition are underway at the US Air Force Research Laboratory at Hanscom Air Force Base by the vertical gradient freeze (VGF) method utilizing a submerged heater. Stirring can be induced in the GaSb melt just above the crystal growth interface by applying a small radial electric current in the liquid together with an axial magnetic field. The transport of any dopant and/or alloy component by the stirring can promote better melt homogeneity and allow for more rapid growth rates before the onset of constitutional supercooling. This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. As the strength of the electromagnetic (EM) stirring increases, the convective dopant transport increases, the dopant transport in the melt reaches a steady state at an earlier time during growth, and the top of the crystal which has solidified after a steady state has been achieved exhibits axial dopant homogeneity. For crystal growth with stronger EM stirring, the crystal exhibits less radial segregation and the axially homogeneous section of the crystal is longer. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.
机译：美国空军研究实验室正在汉斯康空军基地通过垂直梯度冻结（VGF）研究均匀掺杂的锑化镓（GaSb）半导体晶体以及其他成分均匀的Ⅲ-Ⅴ合金晶体的熔体生长）使用浸入式加热器的方法。通过在液体中施加小的径向电流以及轴向磁场，可以在晶体生长界面正上方的GaSb熔体中引起搅拌。通过搅拌来运输任何掺杂剂和/或合金组分可以促进更好的熔体均匀性，并允许在开始构造过冷之前实现更快的生长速率。本文提出了一个数值模型，用于在VGF工艺过程中，掺杂剂在稳定的轴向磁场和稳定的径向电流的作用下，通过淹没加热器的生长而不稳定地传输。随着电磁（EM）搅拌强度的增加，对流掺杂剂传输增加，熔体中的掺杂剂传输在生长过程中的较早时间达到稳态，并且在稳态后已经凝固的晶体顶部获得的结果显示轴向掺杂剂均匀性。对于具有较强EM搅拌的晶体生长，晶体显示较少的径向偏析，并且晶体的轴向均匀截面较长。给出了生长过程中晶体在不同阶段和熔体中的掺杂分布。

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