Valence transition of Eu ions in GaN near the surface

T. Maruyama; S. Morishima; H. Bang

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Valence transition of Eu ions in GaN near the surface

机译：表面附近GaN中Eu离子的价态跃迁

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The valence states of Eu ions doped in GaN were investigated by the core-level X-ray and resonant photoemission spectroscopy. Although the photoluminescence spectra show the emissions from only trivalent Eu ions, the existence of both divalent and trivalent Eu ions is suggested by the Eu 3d core-level spectra. Taking into account the results of the 4d--4f resonant photoemission measurements, it can be concluded that valence transition from Eu~3+ to Eu~2+ occurs near the surface of GaN.

机译：通过核能级X射线和共振光发射光谱研究了掺杂在GaN中的Eu离子的价态。尽管光致发光光谱仅显示来自三价Eu离子的发射，但Eu 3d核心能级光谱暗示了二价和三价Eu离子的存在。考虑到4d--4f共振光发射测量的结果，可以得出结论，在GaN表面附近发生了从Eu〜3 +到Eu〜2 +的价态跃迁。

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来源
《Journal of Crystal Growth》 |2002年第2002期|p.1167-1171|共5页
作者
T. Maruyama; S. Morishima; H. Bang;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Characterization; A1.Surface; A3.Molecular beam epitaxy; B1.Nitrides;

机译：A1。特性化;A1。表面;A3。分子束外延;B1氮化物;

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专利

1. VALENCE-BAND PHOTOEMISSION FROM GAN(001) AND GAAS GAN SURFACES [J] . Strasser T., Solterbeck C., Schattke W., Physical Review, B. Condensed Matter . 1997,第20期

机译：GAN（001）和GAAS GAN表面的价带光化
2. Surface valence transition in trivalent Eu insulating compounds observed by photoelectron spectroscopy [J] . Cho EJ., Oh SJ. Physical Review, B. Condensed Matter . 1999,第24期

机译：光电子能谱法观察三价Eu绝缘化合物的表面价跃迁
3. Mixed valence, percolation, and ferromagnetism in transition-metal-doped GaN [J] . V. I. Litvinov Physical review. B, Condensed Matter And Materials Physics . 2005,第19期

机译：过渡金属掺杂GaN中的化合价，磁化和铁磁性
4. EFFECTS OF SUBSTRATE ORIENTATION ON THE VALENCE BAND SPLITTINGS AND VALENCE BAND OFFSETS IN GaN AND AlN FILMS [C] . Symposium on nitride semiconductors . 1998

机译：底物取向对GaN和Aln薄膜的价带分离器和价带偏移的影响
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy [O] . Tian Li Duan, Ji Sheng Pan, Ning Wang, 2017

机译：角分辨X射线光电子能谱研究Al2O3封端的GaN / AlGaN / GaN异质结构的表面极化
7. “Adsorción y difusión de metales de transición 3d sobre la superficie (0001)GaN. Estudio mediante DFT” / “Adsorption and diffusion of 3d transition metals on the GaN(0001) surface. A DFT study” [O] . González Hernández Rafael Julián 2010

机译：“3d过渡金属在表面（0001）GaN上的吸附和扩散。研究使用DFT“/”在GaN（0001）表面上吸附和扩散3d过渡金属。 DFT研究“

Valence transition of Eu ions in GaN near the surface

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