X-ray diffraction analysis of LT-GaAs multilayer structures

S. Fukushima; K. Mukai; N. Otsuka

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X-ray diffraction analysis of LT-GaAs multilayer structures

机译：LT-GaAs多层结构的X射线衍射分析

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摘要

Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity of a satellite reflection of the multilayer structure along with a peak shift of the 400 Bragg reflection from that of the GaAs substrate. The analysis shows that the concentration of excess As in the ultra-thin layers is significantly higher than those of thick LT-GaAs layers grown under the identical condition of the fluxes and the substrate temperature.

机译：通过分子束外延生长周期性地引入含有过量As的超薄层的低温生长的GaAs（LT-GaAs）的多层结构。通过分析多层结构的卫星反射强度以及400 Bragg反射相对于GaAs衬底的峰移，可以确定超薄层中过量的As浓度。分析表明，在相同的通量和衬底温度条件下，超薄层中过量的As浓度明显高于生长的LT-GaAs厚层。

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《Journal of Crystal Growth》 |2002年第2002期|p.1445-1449|共5页
作者
S. Fukushima; K. Mukai; N. Otsuka;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Low dimensional structures; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Gallium compounds;

机译：A1。低尺寸结构;A1。 X射线衍射;A3。分子束外延;B1。镓化合物;

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X-ray diffraction analysis of LT-GaAs multilayer structures

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