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首页> 外文期刊>Journal of Crystal Growth >Uniform formation process of self-organized InAs quantum dots
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Uniform formation process of self-organized InAs quantum dots

机译：自组织InAs量子点的均匀形成过程

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摘要

Uniform InAs quantum dots (QDs) were successfully grown by molecular beam epitaxy using the conventional Stranski-Krastanov growth mode. Two self-size-limiting (SSL) behaviors of the island size played an important role in achieving the uniform formation of the InAs QDs. In the initial growth stage of the 2-dimensional (2D) InAs platelets, the compressive strain at the step edge of the 2D islands induced the first SSL behavior of their lateral size. The growth mode transition from 2D to 3D rapidly occurred around 20nm in the lateral size. The 3D dots were surrounded by four {136} facets, which provided the second SSL feature. The uniform InAs QDs, grown through two SSL mechanisms, revealed a narrow photoluminescence linewidth of <20meV.
机译：使用常规的Stranski-Krastanov生长模式，通过分子束外延成功地生长了均匀的InAs量子点（QD）。岛大小的两个自大小限制（SSL）行为在实现InAs QD的均匀形成方面起着重要作用。在二维（2D）InAs血小板的初始生长阶段，二维岛台阶边缘的压缩应变引起了其横向尺寸的第一个SSL行为。从2D到3D的生长模式过渡在横向尺寸约20nm处迅速发生。 3D点被四个{136}切面围绕，这提供了第二个SSL功能。通过两种SSL机制生长的均匀InAs QD显示出小于20meV的窄光致发光线宽。

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