Formation of β-FeSi_2 thin films using laser ablation

S. Komuro; T. Katsumata; T. Morikawa

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Formation of β-FeSi_2 thin films using laser ablation

机译：激光烧蚀形成β-FeSi_2薄膜

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Amorphous FeSi2 thin films of stoichiometric composition were deposited on an n-type (1 0 0) Si substrates by laser ablation. In order to investigate the formation and growth processes of the β-FeSi_2 phase, both isothermal annealing and isochronal annealing have been carried out. The results show that the metastable FeSi phase and the β-FeSi_2 phase are dominant at annealing temperatures of T_a≤700 deg C and T_a≥700 deg C, respectively. The growth of the β-FeSi_2 phase is achieved under an annealing condition of T_a≥800 deg C and an annealing time of t_a≥60 min.

机译：通过激光烧蚀将化学计量组成的非晶FeSi2薄膜沉积在n型（1 0 0）Si衬底上。为了研究β-FeSi_2相的形成和生长过程，进行了等温退火和等时退火。结果表明，在T_a≤700℃和T_a≥700℃的退火温度下，亚稳FeSi相和β-FeSi_2相占主导。 β-FeSi_2相的生长在T_a≥800℃的退火条件和t_a≥60min的退火时间下实现。

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《Journal of Crystal Growth》 |2002年第2002期|p.1961-1965|共5页
作者
S. Komuro; T. Katsumata; T. Morikawa;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. X-ray diffraction; A3. Physical vapor deposition processes; A3. Laser epitaxy; B1. Alloys;

机译：A1。 X射线衍射;A3。物理气相沉积过程;A3。激光外延;B1。合金类;

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5. Laser-induced back-ablation of aluminum thin films using picosecond laser pulses. [D] . Bullock, Anthony Burlingame. 1999

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7. The Review of Laser Engineering Topical Papers on Thin Films Fabrication and Control. Atomic Layer Growth Control of Thin Films Using Laser Ablation. [O] . Tomoji KAWAI 1996

机译：薄膜制备和控制激光工程局部纸张综述。使用激光烧蚀的薄膜原子层生长控制。
8. Laser-Induced Back-Ablation of Aluminum Thin Films using Picosecond Laser Pulses [R] . Bullock, A. B. 1999

机译：用皮秒激光脉冲激光诱导铝薄膜背面烧蚀

Formation of β-FeSi_2 thin films using laser ablation

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