Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H-SiC substrate by LP-MOVPE for deep-UV emission

Takayoshi Takano; Makoto Kurimoto; Jun Yamamoto

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Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H-SiC substrate by LP-MOVPE for deep-UV emission

机译：LP-MOVPE在6H-SiC衬底上外延生长与AlN相匹配的高质量BAlGaN四元晶格用于深紫外发射

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摘要

BAlGaN and (BAlGaN/AlN) multi-quantum-well (MQW) structures were grown on a 6H-SiC substrate by low- pressure metalorganic vapor phase epitaxy. Boron compositions of the BAlGaN estimated by Auger electron spectroscopy analysis were in the range of 1.5-13/100. Photoluminescence (PL) spectra at ≈260nm from the (BAlGaN/ AlN) MQW were obtained at room temperature. Moreover, PL spectra of the MQW were successfully improved by decreasing the lattice mismatch between the BAlGaN well and the AlN barrier layers to +0.7/100.

机译：通过低压金属有机气相外延在6H-SiC衬底上生长BAlGaN和（BAlGaN / AlN）多量子阱（MQW）结构。通过俄歇电子能谱分析估计的BAlGaN的硼组成在1.5-13 / 100的范围内。在室温下从（BAlGaN / AlN）MQW获得了约260nm的光致发光（PL）光谱。此外，通过将BAlGaN阱和AlN势垒层之间的晶格失配降低到+ 0.7 / 100，成功改善了MQW的PL光谱。

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来源
《Journal of Crystal Growth》 |2002年第2002期|p.972-977|共6页
作者
Takayoshi Takano; Makoto Kurimoto; Jun Yamamoto;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Metalorganic vapor phase epitaxy; B1. Nitrides;

机译：A3。金属有机气相外延;B1。氮化物;

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1. Theoretical studies on ultraviolet nearly lattice-matched BAlGaN/BAlGaN quantum well structures with quaternary BAlGaN barriers [J] . Park Seoung-Hwan, Ahn Doyeol Japanese journal of applied physics . 2016,第7期

机译：具有四级BAlGaN势垒的紫外近晶格匹配BAlGaN / BAlGaN量子阱结构的理论研究
2. Room-Temperature Epitaxial Growth of High-Quality m-Plane InAIN Films on Nearly Lattice-Matched ZnO Substrates [J] . Tomofumi Kajima, Atsushi Kobayashi, Kohei Ueno, Japanese journal of applied physics . 2010,第7ISSUE1期

机译：在接近晶格匹配的ZnO衬底上室温外延生长高质量m平面InAIN薄膜
3. AlN gradient interlayer design for the growth of high-quality AlN epitaxial film on sputtered AlN/sapphire substrate [J] . Tan Bo, Hu Jiahui, Zhang Jun, CrystEngComm . 2018,第41期

机译：ALN梯度夹层设计，用于溅射ALN /蓝宝石衬底上高质量ALN外延膜的生长
4. Improved Optical Quality of BAlGaN/AlN MQW Structure Grown on 6H-SiC Substrate by Controlling Residual Strain Using Multi-Buffer Layer [C] . Jun Yamamoto, Masato Horie, Yoshiyuki Ishihara, MRS Meeting . 2001

机译：通过使用多缓冲层控制残留应变，改善了在6H-SiC基板上生长的螺旋/ ALN MQW结构的光学质量
5. Microstructural characterization of the initial stages of growth of yttrium barium copper oxide thin films: A comparison of lattice-matched and non-lattice-matched growth. [D] . Streiffer, Stephen Kelly. 1993

机译：钇钡氧化铜薄膜生长初期阶段的微观结构表征：晶格匹配和非晶格匹配生长的比较。
6. Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates [O] . Jinxing Wu, Peixian Li, Shengrui Xu, 2020

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7. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching [O] . Onojima N, Suda J, Matsunami H 2002

机译：通过HCl气体蚀刻在表面可控6H-SiC衬底上生长绝缘AlN的分子束外延生长

Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H-SiC substrate by LP-MOVPE for deep-UV emission

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