Reduction of threading dislocation density in Al_XGa_1-XN grown on periodically grooved substrates

Shingo Mochizuki; Theeradetch Detchprohm; Shigekazu Sano

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Reduction of threading dislocation density in Al_XGa_1-XN grown on periodically grooved substrates

机译：减少在周期性开槽的基板上生长的Al_XGa_1-XN中的螺纹位错密度

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We proposed a heteroepitaxial lateral overgrowth technique using periodically grooved substrates to prepare a GaN single crystal with low dislocation density. By this technique, GaN single crystals have been grown without a selective growth mask or GaN single crystal seeds. Moreover, the AlGaN single crystal, which is important for optoelectronic devices in the UV region, can also be grown using this technique. The reduction of the threading dislocation density in Al_XGa_1-XN single crystals grown on periodically grooved substrates was confirmed by transmission electron microscopy.

机译：我们提出了一种异质外延横向过度生长技术，该技术使用周期性开槽的衬底来制备具有低位错密度的GaN单晶。通过这种技术，已经在没有选择性生长掩模或GaN单晶种的情况下生长了GaN单晶。而且，也可以使用该技术来生长对于UV区域中的光电器件很重要的AlGaN单晶。通过透射电子显微镜确认了在周期性地开槽的基板上生长的Al_XGa_1-XN单晶中的螺纹位错密度的降低。

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来源
《Journal of Crystal Growth》 |2002年第2002期|p.1065-1069|共5页
作者
Shingo Mochizuki; Theeradetch Detchprohm; Shigekazu Sano;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Transmission electron microscopy; A3.Metalorganic vapor phase epitaxy; B1.Nitrides;

机译：A1。透射电子显微镜;A3。金属有机气相外延;B1氮化物;

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Reduction of threading dislocation density in Al_XGa_1-XN grown on periodically grooved substrates

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