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首页> 外文期刊>Journal of Electronic Materials >Electronic Structure of Wurtzite- and Zinc Blende-GaN Studied by Angle-Resolved Photoemission
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Electronic Structure of Wurtzite- and Zinc Blende-GaN Studied by Angle-Resolved Photoemission

机译：角分辨光发射研究纤锌矿和锌共混物-GaN的电子结构

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摘要

The valence band structures of both wurtzite- and zinc blende-GaN were investigated by angle-resolved photoemission spectroscopy. It was found the k dispersions of the upper valence bands show band structures corresponding to wurtzite or zinc blende structure. In wurtzite-GaN, band width of the upper valence band is 6.7 eV in good agreement with the theoretically predicted value. However, the binding energy of Ga 3d level was found to be 15.7 eV relative to the valence band maximum, which is about 2 eV higher binding energy than those predicted by local density approximation calculations. In zinc blende-GaN, some discrepancies in the binding energy of the topmost bands around the valence band maxmum was observed. We discuss the cause of these discrepan- cies by taking into account the strain effect.
机译：通过角分辨光发射光谱法研究了纤锌矿和锌共混物-GaN的价带结构。发现较高价带的k分散体显示出对应于纤锌矿或锌混合结构的能带结构。在纤锌矿型GaN中，高价带的带宽为6.7eV，与理论预测值良好吻合。然而，相对于价带最大值，发现Ga 3d水平的结合能为15.7 eV，比通过局部密度近似计算预测的结合能高约2 eV。在锌共混物-GaN中，观察到价带最大附近的最上面的带的结合能存在一些差异。我们通过考虑应变效应来讨论这些差异的原因。

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