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Study of Different Dispensing Patterns of No-Flow Underfill Using Numerical and Experimental Methods

机译：用数值和实验方法研究无流量底部填埋的不同分配模式

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The conventional capillary underfill process has been a common practice in the industry, somehow the process is costly and time-consuming. Thus, no-flow underfill process is developed to increase the effective lead time production since it integrates the simultaneous reflow and cure of the solder interconnect and underfill. This paper investigates the effect of different dispense patterns of no-flow underfill process by mean of numerical and experimental method. Finite volume method (FVM) was used for the three-dimensional (3D) simulation to simulate the compression flow of the no-flow underfill. Experiments were carried out to complement the simulation validity and the results from both studies have reached a good agreement. The findings show that of all three types of dispense patterns, the combined shape dispense pattern shows better chip filling capability. The dot pattern has the highest velocity and pressure distribution with values of 0.0172 mis and 813 Pa, respectively. The high-pressure region is concentrated at the center of the chip and decreases out toward the edge. Low in pressure and velocity flow factor somehow lead to issue associated with possibility of incomplete filling or void formation. Dot dispense pattern shows less void formation since it produces high-pressure underfill flow within the ball grid array (BGA). This paper provides reliable insight into the industry to choose the best dispense pattern of recently favorable no-flow underfill process.
机译：传统的毛细血管底部填充过程是该行业的常见做法，以某种方式这一过程昂贵且耗时。因此，开发了无流量的底部填充过程以增加有效的铅时间生产，因为它集成了焊料互连和底部填充的同时回流和固化。本文通过数值和实验方法研究了无流量底部填充过程不同分配模式的影响。有限体积法（FVM）用于三维（3D）模拟，以模拟无流量底部填充的压缩流。进行实验以补充模拟有效性，两项研究的结果达成了良好的一致性。研究结果表明，在所有三种类型的分配模式中，组合形状分配模式显示出更好的芯片填充能力。点图案具有最高的速度和压力分布，分别具有0.0172个MIS和813Pa的值。高压区域集中在芯片的中心并朝向边缘减小。低压和速度流量因子以某种方式导致与不完全填充或空隙形成的可能性相关的问题。点分配模式显示较少的空隙形成，因为它在球网格阵列（BGA）内产生高压底部填充流。本文为行业提供可靠的洞察力，选择最近有利的无流量底部填充过程的最佳分配模式。

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